RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| Parameter Name | Attribute value |
| Maker | California Eastern Labs |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 13 V |
| Maximum drain current (ID) | 0.04 A |
| FET technology | METAL SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.03 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DUAL GATE, DEPLETION MODE |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 16 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| NE25139T2U74 | NE25139T2U72 | NE25139T2U73 | NE25139-T2 | |
|---|---|---|---|---|
| Description | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Shell connection | SOURCE | SOURCE | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 13 V | 13 V | 13 V | 13 V |
| Maximum drain current (ID) | 0.04 A | 0.025 A | 0.035 A | 0.04 A |
| FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.03 pF | 0.03 pF | 0.03 pF | 0.03 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 |
| Operating mode | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 16 dB | 16 dB | 16 dB | 16 dB |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Base Number Matches | - | 1 | 1 | 1 |
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