2SK1066-21-TL datasheet, PDF - EEWORLD Datasheet

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2SK1066-21-TL: DescriptionSmall Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, SC-70, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size332KB，7 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK1066-21-TL Overview

Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, SC-70, 3 PIN

2SK1066-21-TL Parametric

Parameter Name	Attribute value
Objectid	1412302500
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Other features	LOW NOISE
Configuration	SINGLE
Maximum drain current (ID)	0.02 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Ordering number:EN2747

N-Channel Junction Silicon FET

2SK1066

High-Frequency

General-Purpose Amplifier Applications

Applications

· High-frequency general-purpose amplifier.

· AM tuner RF amplifier.

· Low-noise amplifier.

Package Dimensions

unit:mm

2058

[2SK1066]

0.425

0.2

0 to 0.1

0.6

0.9

0.3

Features

· Large

y

.

· Small Crss.

· Ultralow noise figure.

· Ultrasmall-sized package permitting 2SK1066-

applied sets to be made smaller and slimmer.

0.15

2.1

1.250

0.65 0.65

2.0

0.425

0.3

1 : Source

2 : Drain

3 : Gate

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VDSX

VGDS

Tstg

Conditions

SANYO : MCP

Ratings

–15

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Gate-to-Drain Breakdown Voltage

Gate-to-Source Leakage Current

Zero-Gate Voltage Drain Current

Cutoff Voltage

Forward Transfer Admittance

Symbol

V(BR)GDS IG=–10µA, VDS=0

IGSS

VGS=–10V, VDS=0

IDSS

VDS=5V, VGS=0

VGS(off)

| yfs |

VDS=5V, ID=100µA

VDS=5V, VGS=0, f=1kHz

Conditions

Ratings

min

–15

–1.0

3.5*

–0.2

–0.5

12.0*

–1.5

typ

max

Unit

* : The 2SK1066 is classified by I

DSS

as follows (unit : mA) :

3.5

6.0 5.0

8.5

7.3

12.0

Continued on next page.

(Note) Marking : A

DSS

rank : 20, 21, 22

• For CP package version, use the 2SK436.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51099TH (KT)/4298TA, TS No.2747–1/7

2SK1066-21-TL Related Products

	2SK1066-21-TL	2SK1066-20	2SK1066-21	2SK1066-22-TL	2SK1066-22	2SK1066-20-TL
Description	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, SC-70, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, SC-70, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, MCP, SC-70, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknow	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Objectid	1412302500	-	-	1412302504	1481082209	1412302496

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