Ordering number : EN2968A
2SC4217
SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor
2SC4217
Features
•
•
Color TV Chroma Output and
Audio Output Applications
High breakdown voltage (VCEO
≥300V).
Micaless package facilitating easy mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
300
300
6
200
400
1.5
10
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=200V, IE=0A
VEB=5V, IC=0A
VCE=10V, IC=10mA
40
*
Ratings
min
typ
max
0.1
0.1
200
*
Unit
µA
µA
Continued on next page.
*
: The 2SC4217 is classified by 10mA hFE as follws:
Rank
C
D
hFE
40 to 80
60 to 120
E
100 to 200
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42507CB TI IM TC-00000677 / 80504TN (PC)/D1598HA (KT)/O239MO,TS No.2968-1/4
2SC4217
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCE=10V, IC=10mA
VCB=50V, f=1MHz
IC=20mA, IB=2mA
IC=20mA, IB=2mA
Ratings
min
typ
70
3.5
0.6
1.0
max
Unit
MHz
pF
V
V
Package Dimensions
unit : mm (typ)
7516-002
8.0
4.0
1.0
3.6
1.0
3.3
1.4
1
2
3
15.5
1.6
0.8
0.8
0.75
1.5
3.0
7.5
11.0
0.7
2.4
4.8
1.7
100
IC -- VCE
A
1.6m
3.0
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
50
IC -- VCE
0
40
µ
A
350
µ
A
300µA
Collector Current, IC -- mA
60
mA
1.0
1.
2mA
A
0.8m
0.6mA
Collector Current, IC -- mA
80
A
1.4m
40
250
µ
A
30
200
µ
A
20
0.4mA
40
150
µ
A
100
µ
A
0.2mA
20
10
50
µ
A
0
0
2
4
6
IB=0mA
8
10
ITR06489
0
0
10
20
30
IB=0
µ
A
40
50
ITR06490
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.2968-2/4
2SC4217
200
180
IC -- VBE
VCE=10V
5
3
2
hFE -- IC
VCE=10V
Ta=75
°
C
25
°
C
Collector Current, IC -- mA
160
140
120
100
DC Current Gain, hFE
100
7
5
3
2
--25
°
C
60
40
--25
°
C
80
Ta=75
°
C
25
°
C
10
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
7
5
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
5
Base-to-Emitter Voltage, VBE -- V
3
ITR06491
100
f T -- IC
Collector Current, IC -- mA
ITR06492
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, f T -- MHz
2
VCE=10V
7
100
7
5
3
2
Output Capacitance, Cob -- pF
5
7
2
3
5
7
2
3
5
7 100
5
3
2
10
7
5
3
2
1.0
0.1
10
7
5
1.0
10
2
3
5
1.0
2
3
5
10
2
3
5
100
Collector Current, IC -- A
1000
7
ITR06493
3
2
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
ITR06494
VBE(sat) -- IC
IC / IB=10
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0
7
5
Ta= --25°C
75
°
C
25
°C
100
7
5
3
2
1.0
Ta=75
°C
25
°
C
3
2
--25
°C
0.1
2
3
5
7
10
2
3
5
Collector Current, IC -- A
7
5
3
7 100
2
ITR06495
5
7 1.0
2
3
5
7
10
2
3
5
ASO
Collector Current, IC -- A
2.0
7 100
2
ITR06496
PC -- Ta
ICP=400mA
Collector Current, IC -- A
2
100
7
5
3
2
10
7
5
3
2
3
Collector Dissipation, PC -- W
IC=200mA
s
0
µ
s
10
m
10
1m
era
n
tio
DC
op
s
1.5
DC
(T
op
era
tio
n(T
No
1.0
a=
25
°
C
)
c=
°
C
25
)
he
at
sin
k
0.5
Tc=25
°
C
Single pulse
5
7
10
2
3
5
7 100
2
3
5
0
0
20
40
60
80
100
120
140
160
ITR06497
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT12434
No.2968-3/4
2SC4217
12
PC -- Tc
Collector Dissipation, PC -- W
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT12435
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No.2968-4/4
Electronics Design Contest
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