MOC205M, MOC206M, MOC207M — Small Outline Optocouplers Transistor Output
April 2013
MOC205M, MOC206M, MOC207M
Small Outline Optocouplers Transistor Output
Features
■
U.L. Recognized (File #E90700, Volume 2)
■
VDE Recognized (File #136616)
■
■
■
■
■
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
(add option “V” for VDE approval, i.e, MOC205VM)
Closely Matched Current Transfer Ratios
Convenient Plastic SOIC-8 Surface Mountable
Package Style
Minimum BV
CEO
of 70 V Guaranteed
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
Applications
■
Feedback Control Circuits
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
General Purpose Switching Circuits
■
Monitor and Detection Circuits
Schematic
Package Outline
ANODE
1
8
N/C
CATHODE
2
7
BASE
Figure 2. Package Outline
N/C
3
6
COLLECTOR
N/C
4
5
EMITTER
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M Rev. 1.0.2
www.fairchildsemi.com
MOC205M, MOC206M, MOC207M — Small Outline Optocouplers Transistor Output
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
ECO
V
CBO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
70
7.0
70
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 minute)
(1)(2)(3)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M Rev. 1.0.2
www.fairchildsemi.com
2
MOC205M, MOC206M, MOC207M — Small Outline Optocouplers Transistor Output
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
V
F
I
R
C
IN
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
CTR
Parameter
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Collector-Output Current
(4)
MOC205M
MOC206M
MOC207M
Isolation Surge Voltage
(1)(2)(3)
Isolation Resistance
(2)
Isolation Capacitance
(2)
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Test Conditions
I
F
= 10 mA
V
R
= 6.0 V
Min.
Typ.*
1.15
0.001
18
Max.
1.5
100
Unit
V
µA
pF
DETECTOR
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0
I
F
= 10 mA, V
CE
= 10 V
40
63
100
f = 60 Hz AC Peak,
t = 1 minute
V = 500 V
I
C
= 2 mA, I
F
= 10 mA
V = 0 V, f = 1 MHz
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 12)
0.2
7.5
5.7
3.2
4.7
2500
10
11
0.4
80
125
200
Vac(rms)
Ω
V
pF
µs
µs
µs
µs
70
7.0
1.0
1.0
100
10
7.0
50
nA
µA
V
V
pF
%
COUPLED
V
ISO
R
ISO
C
ISO
t
on
t
off
t
r
t
f
V
CE (sat)
Collector-Emitter Saturation Voltage
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M Rev. 1.0.2
www.fairchildsemi.com
3
MOC205M, MOC206M, MOC207M — Small Outline Optocouplers Transistor Output
Typical Performance Curves
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.5
1
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= –55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
0.01
0.1
1
10
100
I
F
– LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
10
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
T
A
– AMBIENT TEMPERATURE (°C)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
10000
1.0
Figure 6. Output Current vs. Collector-Emitter Voltage
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
= 10 V
0.9
I
F
= 20 mA
0.8
0.7
100
NORMALIZED CTR
0.6
0.5
I
F
= 10 m A
I
F
= 5 mA
0.4
0.3
0.2
0.1
0.0
10
1
V
CE
= 5 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
10
100
1000
0.1
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE RESISTANCE (kΩ)
Figure 7. Dark Current vs. Ambient Temperature
Figure 8. CTR vs. RBE (Unsaturated)
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M Rev. 1.0.2
www.fairchildsemi.com
4
MOC205M, MOC206M, MOC207M — Small Outline Optocouplers Transistor Output
Typical Performance Curves
(Continued)
1.0
0.9
3.5
4.0
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100Ω
NORMALIZED TO :
t
on
AT R
BE
= OPEN
0.8
I
F
= 20 mA
3.0
NORMALIZED CTR
0.7
0.6
0.5
I
F
= 5 mA
0.4
0.3
0.2
0.1
0.0
10
V
CE
= 0.3 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
0.5
I
F
= 10 m A
NORMALIZED t
on
2.5
2.0
1.5
1.0
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE (kΩ)
R
BE
–
BASE RESISTANCE (M
Ω
)
Figure 9. CTR vs. RBE (Saturated)
Figure 10. Normalized ton vs. RBE
1.6
1.4
1.2
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100
Ω
NORMALIZED TO :
t
off
AT R
BE
= OPEN
f
NORMALIZED t
off
f
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE
(M
Ω
)
Figure 11. Normalized toff vs. RBE
TEST CIRCUIT
V
CC
= 10 V
WAVEFORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2 mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M Rev. 1.0.2
www.fairchildsemi.com
5
京公网安备 11010802033920号
EEWORLD
