2SC5096-RTE85L datasheet, PDF - EEWORLD Datasheet

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2SC5096-RTE85L: DescriptionTRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size450KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC5096-RTE85L Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC5096-RTE85L Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.015 A
Collector-based maximum capacity	0.85 pF
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz
Base Number Matches	1

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2SC5096

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5096

VHF~UHF Band Low Noise Amplifier Applications

•

Low noise figure, high gain.

NF = 1.8dB, |S

21e

= 7.5dB (f = 2 GHz)

Unit: mm

Absolute Maximum Ratings

(Ta

25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Base current

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

1.5

100

125

−55~125

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

TOSHIBA

―

2-2H1A

Weight: 2.4 mg (typ.)

Microwave Characteristics

(Ta

25°C)

Characteristics

Transition frequency

Insertion gain

Symbol

⎪S

21e

⎪

(1)

⎪S

21e

⎪

(2)

NF (1)

NF (2)

Test Condition

6 V, I

7 mA

6 V, I

7 mA, f

1 GHz

6 V, I

7 mA, f

2 GHz

6 V, I

3 mA, f

1 GHz

6 V, I

3 mA, f

2 GHz

Min

⎯

4.5

⎯

Typ.

7.5

1.4

1.8

Max

⎯

3.0

Unit

GHz

Noise figure

Electrical Characteristics

(Ta

25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Output capacitance

Reverse transfer capacitance

Symbol

CBO

EBO

(Note 1)

Test Condition

10 V, I

1 V, I

6 V, I

7 mA

10 V, I

0, f

1 MHz (Note 2)

Min

⎯

Typ.

⎯

0.5

0.4

Max

160

⎯

0.85

Unit

μA

Note 1: h

classification R: 50~100, O: 80~160

Note 2: C

is measured by 3 terminal method with capacitance bridge.

2007-11-01

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