CMM5104J/3Z datasheet, PDF - EEWORLD Datasheet

CMM5104J/3Z: DescriptionCMM5104J/3Z; Categorystorage storage; File Size534KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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CMM5104J/3Z Overview

CMM5104J/3Z

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	QCCN, LCC24,.35SQ,40
Reach Compliance Code	compliant
Maximum access time	250 ns
I/O type	SEPARATE
JESD-30 code	S-XQCC-N24
memory density	4096 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	24
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	QCCN
Encapsulate equivalent code	LCC24,.35SQ,40
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.0004 A
Minimum standby current	2.5 V
Maximum slew rate	0.0045 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	QUAD
total dose	100k Rad(Si) V

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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