1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR
| Parameter Name | Attribute value |
| package instruction | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 30 pF |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 180 |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| VCEsat-Max | 0.4 V |
| Base Number Matches | 1 |
| 2SC4040TL2/R | 2SC4040TL2P | 2SC4040TL2Q | 2SC4040TL2R | 2SC4040TL2/Q | 2SC4040TL2 | 2SC4040TL2/P | |
|---|---|---|---|---|---|---|---|
| Description | 1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | 1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | 1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 180 | 82 | 120 | 180 | 120 | 82 | 82 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | AMPLIFIER | AMPLIFIER | AMPLIFIER | SWITCHING | AMPLIFIER | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| ECCN code | - | EAR99 | EAR99 | EAR99 | - | EAR99 | - |
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