UNISONIC TECHNOLOGIES CO., LTD
2SD1060
NPN PLANAR SILICON
TRANSISTOR
FEATURES
* Low collector-to-emitter saturation voltage:
V
CE(SAT)
=0.4V max/I
C
=3A, I
B
=0.3A
1
TO-126
NPN SILICON TRANSISTOR
1
SOT-89
1
TO-92
1
TO-220
1
TO-252
1
TO-251
*Pb-free plating product number: 2SD1060L
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2SD1060-x-AB3-R
2SD1060L-x-AB3-R
2SD1060-x-T60-K
2SD1060L-x-T60-K
2SD1060-x-T92-B
2SD1060L-x-T92-B
2SD1060-x-T92-K
2SD1060L-x-T92-K
2SD1060-x-TA3-T
2SD1060L-x-TA3-T
2SD1060-x-TM3-T
2SD1060L-x-TM3-T
2SD1060-x-TN3-R
2SD1060L-x-TN3-R
2SD1060-x-TN3-T
2SD1060L-x-TN3-T
Package
SOT-89
TO-126
TO-92
TO-92
TO-220
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Bulk
Tape Box
Bulk
Tube
Tube
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R208-023.C
2SD1060
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
NPN SILICON TRANSISTOR
RATINGS
UNIT
60
V
50
V
6
V
5
A
9
A
SOT-89
500
mW
TO-126/TO-251
1
W
Collector Dissipation
P
C
TO-252/TO-220
2
W
TO-92
625
mW
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
V
CE(SAT)
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=1mA, I
E
=0
I
C
=1mA, R
BE
=∞
I
C
=0, I
E
=1mA
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=3A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
I
C
=3A, I
B
=0.3A
See specified test circuit
See specified test circuit
See specified test circuit
MIN
60
50
6
TYP
MAX
UNIT
V
V
V
mA
mA
70
30
30
100
0.1
0.1
360
0.4
0.1
1.4
0.2
MHZ
pF
V
µs
µs
µs
CLASSIFICATION of h
FE1
RANK
RANGE
Q
70-140
R
100-200
S
180-360
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2 of 5
QW-R208-023.C
2SD1060
SWITCHING TIME TEST CIRCUIT
I
B1
1
IN
PW=20µs
t
r
×t
f
≤15ns
50
1µ
(For PNP, the polarity is
reversed)
10I
B1
= -10I
B2
=I
C
=2A
-5V
I
B2
100
NPN SILICON TRANSISTOR
OUT
10
1µ
20V
Unit (resistance:
Ω，capacitance:
F)
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QW-R208-023.C
2SD1060
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-to-Emitter Voltage
10
A A
450mA
0m m mA A
40 350 300 250m
00mA
2
8
150mA
500m
A
NPN SILICON TRANSISTOR
Collector Current vs. Base-to-Emitter Voltage
10
V
CE
=2V
9
8
Collector Current, I
C
(A)
7
0
℃
25
℃
Collector Current, I
C
(A)
100mA
6
50mA
4
2
I
B
=0
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-to-Emitter Voltage, V
CE
(V)
6
5
4
3
2
1
0
0
0.2 0.4 0.6
0.8 1.0 1.2
Base-to-Emitter Voltage, V
BE
(V)
Ta=8
-20
℃
1.4
Collector-Emitter Saturation Voltage,
V
CE (SAT)
(V)
DC Current Gain, h
FE
0
=8
Ta
Collector-Emitter Saturation Voltage,
V
CE(SAT)
(V)
10
5
3
2
Collector-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Saturation Voltage,
V
BE(SAT)
(V)
I
C
/I
B
=20
10
7
5
3
2
Base-Emitter Saturation Voltage vs.
Collector Current
1.0
5
3
2
80
a=
T
1.0
7
5
3
2
2
I
C
/I
B
=10
I
C
/I
B
=20
0.1
5
3
2
2
3
5
2
3
5
2
3
-20℃
25℃
0.01
0.1
1.0
Collector Current, I
C
(A)
5
10
2
3
5
0.1
1.0
Collector Current, I
C
(A)
2
3
5
2
3
5
10
2
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QW-R208-023.C
2SD1060
TYPICAL CHARACTERISTICS(Cont.)
2
NPN SILICON TRANSISTOR
ASO
I
CP
I
C
10
0m
s
s
1m
ms
10
Transition Frequency vs. Collector Current
10000
Transition frequency, f
T
(MHz)
3000
1000
300
100
30
10
3
1
0.01 0.03
0.1
0.3
1
3
Collector Current, I
C
(A)
10
V
CE
=5V
f=1MHz
T
C
=25℃
10
Collector Current , I
C
(A)
7
5
3
2
DC
Op
1.0
7
5
3
2
er a
ti o
n
0.1
5
(Single pulse with
regard to 1 ~ 100ms)
7
1.0
10
100
Collector-to-Emitter Voltage, V
CE
(V)
2
3
5
7
2
3
5
7
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R208-023.C
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