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A3PN250Z-VQ100Y

Description
Field Programmable Gate Array
CategoryProgrammable logic devices    Programmable logic   
File Size6MB,114 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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A3PN250Z-VQ100Y Overview

Field Programmable Gate Array

A3PN250Z-VQ100Y Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codeunknown
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Revision 11
ProASIC3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
Designed to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low Power
nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
ProASIC
®
3
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• –20°C to +70°C
Table 1 • ProASIC3 nano Devices
ProASIC3 nano Devices
ProASIC3 nano-Z Devices
1
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
2
4,608-Bit Blocks
2
A3PN010
10,000
86
260
1
A3PN015
1
A3PN020
15,000
128
384
1
4
3
49
QN68
20,000
172
520
1
4
3
49
52
QN68
30,000
256
768
1
6
2
77
83
QN48, QN68
VQ100
A3PN060
60,000
512
1,536
18
4
1
Yes
1
18
2
71
71
A3PN125
125,000
1,024
3,072
36
8
1
Yes
1
18
2
71
71
A3PN250
A3N250Z
1
250,000
2,048
6,144
36
8
1
Yes
1
18
4
68
68
A3PN030Z
1,2
A3PN060Z
1
A3PN125Z
1
FlashROM Kbits
Secure (AES) ISP
VersaNet Globals
I/O Banks
Maximum User I/Os (packaged device)
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
2
2
4
2
34
34
QN48
Integrated PLL in CCCs
VQ100
VQ100
VQ100
Notes:
1. Not recommended for new designs.
2. A3PN030Z and smaller devices do not support this feature.
3. For higher densities and support of additional features, refer to the
ProASIC3
and
ProASIC3E
datasheets.
† A3PN030 and smaller devices do not support this feature.
January 2013
© 2013 Microsemi Corporation
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