HY62UF8100/ HY62QF8100/ HY62EF8100
/
HY62SF8100 Series
128Kx8bit full CMOS SRAM
DESCRIPTION
The HY62UF8100 / HY62QF8100 / HY62EF8100
/ HY62SF8100 is a high speed, super low power
and 1M bit full CMOS SRAM organized as
131,072 words by 8bit. The HY62UF8100 /
HY62QF8100 / HY62EF8100 / HY62SF8100 uses
high performance full CMOS process technology
and designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.5V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup(LL/SL-part)
- 1.5V(min) data retention
•
Standard pin configuration
-
32pin sTSOP-I
Product
Voltage
Speed
Operation
Standby Current(uA)
No.
(V)
(ns)
Current(mA)
LL
SL
HY62UF8100
3.0
70/85/100
10
5
1
HY62UF8100-I
3.0
70/85/100
10
5
1
HY62QF8100
2.5
85/100/120
5
5
1
HY62QF8100-I
2.5
85/100/120
5
5
1
HY62EF8100
2.0
100/120/150
5
5
1
HY62EF8100-I
2.0
100/120/150
5
5
1
HY62SF8100
1.8
120/150/200
5
5
1
HY62SF8100-I
1.8
120/150/200
5
5
1
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
Temperature
(°C)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
PIN CONNECTION
A11
A9
A8
A13
/WE
CS2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
BLOCK DIAGRAM
SENSE AMP
A0
ADD INPUT BUFFER
COLUMN DECODER
ROW DECODER
I/O1
OUTPUT BUFFER
I/O8
A16
CONTROL
LOGIC
Small TSOP-I(Standard)
/CS1
CS2
/OE
/WE
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Pin Name
A0 ~ A16
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Address Input
Data Input/Output
Power(3.0V, 2.5V, 2.0V or 1.8V)
Ground
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.05 /Feb.99
Hyundai Semiconductor
WRITE DRIVER
MEMORY ARRAY
1024x1024
HY62UF8100/HY62QF8100/HY62EF8100/HY62SF8100 Series
ORDERING INFORMATION
Part No.
HY62UF8100LLST
HY62UF8100SLST
HY62UF8100LLST-I
HY62UF8100SLST-I
HY62QF8100LLST
HY62QF8100SLST
HY62QF8100LLST-I
HY62QF8100SLST-I
HY62EF8100LLST
HY62EF8100SLST
HY62EF8100LLST-I
HY62EF8100SLST-I
HY62SF8100LLST
HY62SF8100SLST
HY62SF8100LLST-I
HY62SF8100SLST-I
Speed
70/85/100
70/85/100
70/85/100
70/85/100
85/100/120
85/100/120
85/100/120
85/100/120
100/120/150
100/120/150
100/120/150
100/120/150
120/150/200
120/150/200
120/150/200
120/150/200
Power
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
Temp.
Package
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
sTSOP
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
Note 1. E.T. : Extended Temperature, Blank : Normal Temperature
ABSOLUTE MAXIMUM RATING (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Rating
-0.2 to 3.6
-0.2 to 4.0
0 to 70
Unit
V
V
°C
Remark
-40 to 85
°C
HY62UF8100
HY62QF8100
HY62EF8100
HY62SF8100
HY62UF8100-I
HY62QF8100-I
HY62EF8100-I
HY62SF8100-I
T
STG
P
D
T
SOLDER
Storage Temperature
Power Dissipation
Lead Soldering Temperature & Time
-55 to 150
1.0
260
•
5
°C
W
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev.05 /Feb.99
2
HY62UF8100/HY62QF8100/HY62EF8100/HY62SF8100 Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Parameter
Supply Voltage
Product
HY62UF8100-(I)
HY62QF8100-(I)
HY62EF8100-(I)
HY62SF8100-(I)
HY62UF8100-(I)
HY62QF8100-(I)
HY62EF8100-(I)
HY62SF8100-(I)
HY62UF8100-(I)
HY62QF8100-(I)
HY62EF8100-(I)
HY62SF8100-(I)
HY62UF8100-(I)
HY62QF8100-(I)
HY62EF8100-(I)
HY62SF8100-(I)
Min.
2.7
2.2
1.8
1.6
0
Typ.
3.0
2.5
2.0
1.8
0
Max.
3.3
2.8
2.2
2.0
0
Unit
V
V
V
V
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
2.2
2.0
1.6
1.4
-0.2
(1)
-
-
-
-
Vcc+0.2
Vcc+0.2
Vcc+0.2
Vcc+0.2
0.4
V
V
V
V
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
TRUTH TABLE
/CS1
H
X
L
L
L
CS2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
MODE
Standby
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
Data Out
Data In
Supply Current
Isb, Isb1
Icc
Icc
1
Icc
1
Note :
1. H=V
IH
, L=V
IL
, X=don't care
Rev.05 /Feb.99
3
HY62UF8100/HY62QF8100/HY62EF8100/HY62SF8100 Series
DC ELECTRICAL CHARACTERISTICS
Vcc = 3.0V±10%/2.5V±10%/2.0V±10%/1.8V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.)
Sym
Parameter
Test Condition
Min.
Typ.
Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS1 = V
IH
or
-1
-
1
CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS1 = V
IL
,
Vcc = 3.0V
-
5
10
Current
CS2 = V
IH,
V
IN
= V
IH
or V
IL,
Vcc = 2.5V/2V/
-
3
5
I
I/O =
0mA
1.8V
I
CC1
Average
HY62UF8100-(I) /CS1 = V
IL
CS2 = V
IH,
-
-
55
Operating HY62QF8100-(I) Min Duty Cycle = 100%, I
I/O =
0mA
-
-
40
HY62EF8100-(I)
-
-
25
Current
HY62SF8100-(I)
-
-
20
I
SB
TTL
HY62UF8100-(I) /CS1 = V
IH
or CS2 = V
IL
-
-
0.5
Standby
HY62QF8100-(I)
-
-
0.3
Current
HY62EF8100-(I)
-
-
0.3
(TTL Input)
HY62SF8100-(I)
-
-
0.3
I
SB1
Standby Current
/CS1 > Vcc – 0.2V
SL
-
0.05
1
(CMOS Input)
CS2 < 0.2V or
LL
-
-
5
CS2 > Vcc – 0.2V
V
OL
Output Low Voltage
Vcc = 3.0V
I
OL
= 2.1mA
-
-
0.4
Vcc = 2.5V
I
OL
= 0.5mA
Vcc = 2.0V
I
OL
= 0.33mA
Vcc = 1.8V
I
OL
= 0.26mA
V
OH
Output
HY62UF8100-(I) Vcc = 3.0V
I
OH =
-1.0mA
2.2
-
-
High
HY62QF8100-(I) Vcc = 2.5V
I
OH =
-0.5mA
2.0
-
-
Voltage
HY62EF8100-(I) Vcc = 2.0V
I
OH =
-0.44mA
1.6
-
-
HY62SF8100-(I) Vcc = 1.8V
I
OH =
-0.44mA
1.4
-
-
Note : Typical values are at Vcc = 3.0V/2.5V/2.0V/1.8V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
V
V
V
Rev.05 /Feb.99
4
HY62UF8100/HY62QF8100/HY62EF8100/HY62SF8100 Series
AC CHARACTERISTICS
Vcc = 3.0V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
-70
-85
-10
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
70
-
85
-
100
-
2
tAA
Address Access Time
-
70
-
85
-
100
3
tACS
Chip Select Access Time
-
70
-
85
-
100
4
tOE
Output Enable to Output Valid
-
40
-
45
-
50
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
20
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
7
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
8
tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
9
tOH
Output Hold from Address Change
10
-
10
-
15
-
WRITE CYCLE
10 tWC
Write Cycle Time
70
-
85
-
100
-
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
50
-
55
-
75
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
25
0
30
0
35
17 tDW
Data to Write Time Overlap
30
-
35
-
45
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Vcc = 2.5V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
-85
-10
-12
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
85
-
100
-
120
-
2
tAA
Address Access Time
-
85
-
100
-
120
3
tACS
Chip Select Access Time
-
85
-
100
-
120
4
tOE
Output Enable to Output Valid
-
45
-
50
-
60
5
tCLZ
Chip Select to Output in Low Z
10
-
20
-
20
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
10
-
7
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
40
8
tOHZ
Out Disable to Output in High Z
0
30
0
30
0
40
9
tOH
Output Hold from Address Change
10
-
15
-
15
-
WRITE CYCLE
10 tWC
Write Cycle Time
85
-
100
-
120
-
11 tCW
Chip Selection to End of Write
70
-
80
-
100
-
12 tAW
Address Valid to End of Write
70
-
80
-
100
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
55
-
75
-
85
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
30
0
35
0
40
17 tDW
Data to Write Time Overlap
35
-
45
-
50
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
10
-
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.05 /Feb.99
5
京公网安备 11010802033920号
EEWORLD
