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2SC3150K

Description
TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SC3150K Overview

TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-220AB

2SC3150K Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
surface mountNO
Nominal transition frequency (fT)15 MHz
Base Number Matches1
Ordering number:EN1069C
NPN Triple Diffused Planar Silicon Transistor
2SC3150
800V/3A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥900V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SC3150]
JEDEC : TO-220AB
EIAJ
: SC-46
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
Conditions
Ratings
900
800
7
3
10
1.5
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.2A
VCE=5V, IC=1A
VCE=10V, IC=0.2A
VCB=10V, f=1MHz
10*
8
15
60
MHz
pF
Conditions
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
* : The h
FE
1 of the 2SC3150 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
10
K
20
15
L
30
20
M
40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/5097KI/D064MW/6092KI No.1069–1/4

2SC3150K Related Products

2SC3150K 2SC3150L 2SC3150M
Description TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-220AB TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-220AB TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-220AB
Reach Compliance Code compli unknow unknow
Maximum collector current (IC) 3 A 3 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 10 15 20
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 50 W 50 W 50 W
surface mount NO NO NO
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1
Is it Rohs certified? - conform to conform to
Factory Lead Time - 1 week 1 week
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