Ordering number:ENN1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Package Dimensions
unit:mm
2006B
[2SB985/2SD1347]
6.0
5.0
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
0.5
0.6
4.7
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SB985
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
100*
40
150
25(39)
MHz
pF
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
560*
Unit
µA
µA
* : The 2SB985/2SD1347 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/D064MW/1253KI, TS No.1244–1/4
2SB985/2SD1347
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
VCE(sat)
VBE(sat)
Conditions
IC=(–)2A, IB=(–)100mA
IC=(–)2A, IB=(–)100mA
(–)60
(–)50
(–)6
Ratings
min
typ
0.19
(–0.35)
(–)0.94
max
0.5
(–0.7)
(–)1.2
Unit
V
V
V
V
V
V
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA IC=0
--5
IC -- VCE
0
--2
A
0m
2SB985
Collector Current, IC – mA
5
IC -- VCE
2SD1347
mA
200
Collector Current, IC – mA
--4
0
--10
--3
mA
4
100m
A
40mA
30mA
A
--40m
--50mA
3
50mA
--2
--30mA
--20mA
--10mA
2
20mA
10mA
--1
1
0
0
--0.4
--0.8
IB=0
--1.2
--1.6
--2.0
ITR08797
0
0
0.4
0.8
IB=0
1.2
1.6
2.0
ITR08798
Collector-to-Emitter Voltage, VCE – V
--4000
µ
A
--500
Collector-to-Emitter Voltage, VCE – V
3500
µA
IC -- VCE
--3500µA
2SB985
Collector Current, IC – mA
0
µ
A
500
IC -- VCE
2SD1347
300
Collector Current, IC – mA
--3000µA
2500
µA
2000µA
--400
400
--2500µA
--300
--2000µA
300
1500µA
200
--1500µA
--200
--1000µA
--100
1000µA
100
--500µA
IB=0
0
--1
--2
--3
--4
--5
ITR08799
500µA
IB=0
0
1
2
3
4
5
ITR08800
0
0
Collector-to-Emitter Voltage, VCE – V
--1.6
--1.4
Collector-to-Emitter Voltage, VCE – V
1.6
1.4
IC -- VBE
2SB985
VCE= --2V
Collector Current, IC – A
IC -- VBE
2SD1347
VCE=2V
Collector Current, IC – A
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08802
Base-to-Emitter Voltage, VBE – V
ITR08801
Base-to-Emitter Voltage, VBE – V
No.1244–2/4
2SB985/2SD1347
1000
7
5
hFE -- IC
VCE=2V
1000
f T -- IC
VCE=10V
Gain-Bandwidth Product, fT – MHz
7
5
3
2
DC Current Gain, hFE
3
2
2SB985
2SD1347
2SD1
347
100
7
5
3
2
10
0.01
100
7
5
3
2
2SB9
85
(For PNP, minus sign is omitted.)
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC – A
5
3
5 7 10
ITR08803
10
0.01
(For PNP, minus sign is omitted.)
2
3
5 7 0.1
2
3
Collector Current, IC – A
5 7 1.0
2
3
5 7 10
ITR08804
Cob -- VCB
f=1MHz
10000
VCE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
2
3
5
7 0.1
2
Output Capacitance, Cob -- pF
2
100
7
5
3
2
985
2SD
1347
2SB
2SB
985
2SD
134
7
10
1.0
(For PNP, minus sign is omitted.)
3
5
7 1.0
2
3
5
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
3
2
100
ITR08805
7
Collector Current, IC – A
10
7
5
ITR08806
VBE(sat) -- IC
IC / IB=20
ASO
ICP=6A
IC=3A
Single pulse
1m
s
10
ms
Base-to-Emitter
Saturation Voltage, VBE (sat) – mV
Collector Current, IC – A
10
7
5
3
2
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
DC
op
0m
s
ion
era
t
1.0
7
5
3
2
0.01
(For PNP, minus sign is omitted.)
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
0.01
0.1
(For PNP, minus sign is omitted.)
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC – A
1.4
ITR08807
Collector-to-Emitter Voltage, VCE – V
5 7 100
ITR08808
PC -- Ta
1.2
Collector Dissipation, P
C
– W
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR08809
No.1244–3/4
2SB985/2SD1347
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.1244–4/4
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