2SC5237
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
•
Excellent high frequency characteristics
f
T
= 400 MHz typ
•
High voltage and low output capacitance
V
CEO
= 250 V, Cob = 3.5 pF typ
•
Suitable for wide band video amplifier
Outline
TO-126FM
1
2
1. Emitter
2. Collector
3. Base
3
2SC5237
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
Tj
Tstg
Ratings
250
250
3
150
300
1.4
8*
Junction temperature
Storage temperature
Note:
1. T
C
= 25°C
1
Unit
V
V
V
mA
mA
W
150
–55 to +150
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
250
250
—
—
1
Typ
—
—
—
—
—
—
—
400
3.5
Max
—
—
1.0
10
200
1.0
1.0
—
5.0
Unit
V
V
µA
µA
—
V
V
MHz
pF
Test conditions
I
C
= 10 µA, I
E
= 0
I
C
= 1 mA, R
BE
=
∞
V
CB
= 200 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 30 V, I
C
= 50 mA
V
CB
= 30 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
I
CBO
I
EBO
h
FE
*
V
BE
V
CE(sat)
f
T
Cob
60
—
—
300
—
1. The 2SC2537 is grouped by h
FE
and its specification is as follows.
B
60 to 120
C
100 to 200
2
2SC5237
Maximum Collector Dissipation Curve
8
Collector Power Dissipation Pc (W)
6
Tc
4
2
1.4W
Ta
0
50
100
150
200
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
Area of Safe Operation
1000
I
C
(mA)
500
1 shot pulse (Ta = 25
°C)
ic(peak)
10
PW
Collector Current
200 I max
C
100
s
m
=
1m
s
DC
)
n
°
C
tio 5
ra 2
pe =
O (Tc
50
20
10
10
20
50
100 200
500
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
200
I
C
(mA)
A
20 m
mA
8
mA
1
6
1
4 mA
1
mA
12
mA
10
A
8m
A
6m
4 mA
Collector Current
100
2 mA
Tc = 25
°C
I
B
= 0
0
5
10
Collector to Emitter Voltage V
CE
(V)
3
2SC5237
1000
DC Current Transfer Ratio h
FE
500
DC Current Transfer Ratio vs.
Collector Current
200
100
50
Tc = 75°C
25°C
–25°C
20
V
CE
= 10 V
10
1
2
5 10 20
50 100 200
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
5
2
1
0.5
Tc = 75°C
0.2
0.1
1
–25°C
25°C
2
5 10 20
50 100 200
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
10
Base to Emitter Saturation Voltage
V
BE(sat)
(V)
5
I
C
/ I
B
= 10
I
C
/ I
B
= 10
0.05
2
1
–25°C
25°C
0.5
Tc = 75°C
0.2
0.1
1
2
5 10 20
50 100 200
Collector Current I
C
(mA)
4
2SC5237
200
I
C
(mA)
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
Base to Emitter Voltage V
BE
(V)
Gain Bandwidth Product vs.
Collector Current
1000
Collector Current vs.
Base to Emitter Voltage
V
CE
= 10 V
Tc = 75°C
25°C
–25°C
Gain Babdwidth Product f
T
(MHz)
Collector Current
500
200
100
50
20
10
V
CE
= 30 V
Tc = 25
°C
1
2
5 10 20
50 100 200
Collector Current I
C
(mA)
Collector Output Capacitance
vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
20
10
5
2
I
E
= 0
f = 1 MHz
1
2
5
10 20
50 100
Collector to Base Voltage V
CB
(V)
1
5
京公网安备 11010802033920号
EEWORLD
