Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4424
DESCRIPTION
·With
TO-3PML package
·High
breakdown voltage, high reliability
.
·Fast
switching speed.
·Wide
ASO.
APPLICATIONS
·Switching
regulator applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
·
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
16
32
6
60
W
UNIT
V
V
V
A
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4424
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEX(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA; I
E
=0
I
C
=10mA; R
BE
=∞
I
E
=1mA; I
C
=0
I
C
=8A;I
B1
=0.8A;
I
B2
=-3.2A;L=200μH
I
C
=10A;I
B
=2A
I
C
=10A;I
B
=2A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=10A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=2A ; V
CE
=10V
V
CB
=10V;f=1MHz
15
10
10
20
230
MHz
pF
MIN
500
400
7
400
0.8
1.5
10
10
50
TYP.
MAX
UNIT
V
V
V
V
V
V
μA
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=12A;R
L
=16.6Ω
I
B1
=2.4A;- I
B2
=4.8A
V
CC
=200V
0.5
2.5
0.3
μs
μs
μs
h
FE-1
classifications
L
15-30
M
20-40
N
30-50
2
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