Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
M
Di ain
sc te
on na
tin nc
ue e/
d
0.7±0.1
s
Features
q
q
q
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
4.2±0.2
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to
2SD1985
base voltage
Collector to
2SD1985A
2SD1985
(T
C
=25˚C)
60
80
60
80
6
5
3
emitter voltage 2SD1985A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1985
(T
C
=25˚C)
Symbol
current
2SD1985A
nt
in
Collector cutoff
2SD1985
ue
2SD1985A
I
CES
I
CEO
I
EBO
Emitter cutoff current
Collector to emitter
voltage
2SD1985
/D
ce
2SD1985A
V
CEO
h
FE1*
h
FE2
V
BE
f
T
t
on
t
stg
t
f
Forward current transfer ratio
M
Pl
e
Transition frequency
Turn-on time
Storage time
Fall time
ai
Collector to emitter saturation voltage
nt
Base to emitter voltage
V
CE(sat)
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
Note: Ordering can be made by the common rank (PQ rank h
FE
= 70 to 250) in the rank classification.
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
7.5±0.2
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
Ratings
Unit
V
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5
+0.2
–0.1
V
V
A
A
0.8±0.1
2.54±0.25
5.08±0.5
2
1
3
25
2
W
150
˚C
˚C
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
–55 to +150
Conditions
min
typ
max
200
200
300
300
1
Unit
µA
µA
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
co
mA
V
is
I
C
= 30mA, I
B
= 0
60
80
70
10
an
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
250
en
1.8
V
V
I
C
= 3A, I
B
= 0.375A
1.2
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
30
MHz
µs
µs
µs
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
0.5
2.5
0.4
1
Power Transistors
P
C
— Ta
40
5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
30
T
C
=25˚C
2SD1985, 2SD1985A
I
C
— V
CE
8
V
CE
=4V
7
25˚C
6
5
4
3
2
1
T
C
=100˚C
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
I
B
=100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
1
10mA
3
(1)
20
2
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
4
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=8
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
–25˚C
T
C
=100˚C
25˚C
10000
h
FE
— I
C
10000
V
CE
=4V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–10
–3
I
CP
I
C
DC
10ms
10000
Non repetitive pulse
T
C
=25˚C
t=1ms
R
th(t)
— t
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
–1
– 0.3
– 0.1
– 0.03
– 0.01
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
1000
100
(1)
(2)
10
2SD1985
– 0.003
– 0.001
–1
2SD1985A
1
–3
–10
–30
–100 –300 –1000
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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