2SC4083
NPN Silicon Transistor
P b
Lead(Pb)-Free
1
3
FEATURES:
* Radio frequency ampli er
* High transition frequency
* High gain with low collector-to base time constant
* Low noise (NF)
* Marking: 1D
1. BASE
2. EMITTER
3. COLLECTOR
2
SOT-323(SC-70)
Maximum Ratings
( T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Value
20
11
3
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
°C
°C
SOT-323 Outline Demensions
A
Unit:mm
TOP VIEW
D
E
G
H
B
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
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2SC4083
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
Parameter
Collector-base breakdown voltage
I
C
=10 A, I
E
=0
WEITRON
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
C
C
·
r
bb
NF
Min
20
11
3
-
-
56
-
-
-
-
-
Typ
-
-
-
-
-
-
-
1.2
-
-
3.5
Max
-
-
-
0.5
0.5
270
0.5
-
1.5
12
-
Unit
V
V
V
µA
µA
-
V
GHz
pF
pS
dB
Collector-emitter breakdown voltage
I
C
= 1mA, I
B
=0
Emitter-base breakdown voltage
I
E
= 10 A, I
C
=0
Collector cut-o current
V
CB
=10V, I
E
=0
Emitter cut-o current
V
EB
=2V, I
C
=0
DC current gain
V
CE
=10V, I
C
= 5mA
Collector-base saturation voltage
I
C
=10mA, I
B
=5mA
Transition frequency
V
CE
=10V,I
C
=10mA, f =500MHz
Output capacitance
V
CB
=10V,I
E
=0, f =1MHz
Collector-base time constant
V
CB
=10V,I
C
=10mA, f=31.8MHz
Noise gure
V
CE
=6V,I
C
=2mA,f =500MHz,Rg=50
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270
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2SC4083
Typical Characteristics
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