Ordering number : EN1245E
2SB986 / 2SD1348
SANYO Semiconductors
DATA SHEET
2SB986 / 2SD1348
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
50V / 4A Switching Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications
( ) : 2SB986
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(--)6
(--)4
(--)6
1.2
10
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(-
-)4V, IC=0A
Ratings
min
typ
max
(--)1.0
(--)1.0
Unit
mA
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
D1609 TK IM / 80906EA MS IM / 11504TN (KT) / 92098HA (KT) / 10966TS (KOTO) X-6510 / 4107KI / D12MW, TS No.1245-1/4
2SB986 / 2SD1348
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCE=(-
-)2V, IC=(-
-)100mA
VCE=(-
-)2V, IC=(--)3A
VCE=(-
-)10V, IC=(--)50mA
VCB=(-
-)10V
IC=(--)2A, IB=(-
-)100mA, Pulse
IC=(--)2A, IB=(-
-)100mA, Pulse
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
(--)60
(--)50
(--)6
Ratings
min
100*
40
150
(39)25
(--0.35)0.19
(--)0.94
(--0.7)0.5
(-
-)1.2
MHz
pF
V
V
V
V
V
typ
max
560*
Unit
* : The 2SB986 / 2SD1348 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0
4.0
2.7
1.6
0.8
0.8
0.6
1.5
3.0
7.0
11.0
0.5
15.5
1
2
3
1.2
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
2.4
4.8
--5.0
--4.5
IC -- VCE
2SB986
Pulse
Collector Current, IC -- A
5.0
4.5
IC -- VCE
2SD1348
Pulse
Collector Current, IC -- A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--2
A
00m
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--10
mA
A
100m
80mA
60mA
40mA
20mA
10mA
5mA
--
50mA
--20mA
--10mA
--5mA
IB=0mA
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0
0.4
0.8
ITR08810
IB=0mA
1.2
1.6
2.0
ITR08811
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.1245-2/4
2SB986 / 2SD1348
--2.0
--1.8
IC -- VCE
--14
mA
Collector Current, IC -- A
Collector Current, IC -- A
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2
--4
A
--12m
A
--10m
--8mA
2SB986
Pulse
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
IC -- VCE
8mA
2SD1348
Pulse
7mA
6mA
5mA
4mA
--6mA
--4mA
3mA
2mA
1mA
--2mA
0.2
IB=0mA
--6
--8
--10
--12
--14
--16
--18
--20
0
0
2
4
6
8
ITR08812
1.6
1.4
IB=0mA
10
12
14
16
18
20
Collector-to-Emitter Voltage, VCE -- V
--1.6
--1.4
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
ITR08813
IC -- VBE
2SB986
VCE= --2V
Collector Current, IC -- A
2SD1348
VCE=2V
Collector Current, IC -- A
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08815
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR08814
1000
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
VCE=2V
Gain-Bandwidth Product, f T -- MHz
f T -- IC
7
5
3
2
VCE=10V
DC Current Gain, hFE
3
2
2SB986
2SD1348
2SD1
348
100
7
5
3
2
10
0.01
100
7
5
3
2
2SB9
86
For PNP minus sign is omitted.
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
3
5 7 10
ITR08816
10
0.01
For PNP minus sign is omitted.
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
10000
5 7 10
ITR08817
VCE(sat) -- IC
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
2
3
5
7 0.1
2
IC / IB=20
Output Capacitance, Cob -- pF
2
100
7
5
3
2
986
2SD
1348
2SB
2SB
986
2SD
134
8
10
1.0
For PNP minus sign is omitted.
2
3
5
7
10
2
3
5
For PNP minus sign is omitted.
3
5
7 1.0
2
3
5
Collector to Base Voltage, VCB -- V
100
ITR08818
7
Collector Current, IC -- A
ITR08819
No.1245-3/4
2SB986 / 2SD1348
3
2
VBE(sat) -- IC
IC / IB=20
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
ICP=6A
IC=4A
DC
1
10
ms
ms
10
0m
s
Single pulse
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
3
2
Collector Current, IC -- A
10
op
(T
era
a=
tio
25
n
°
C
)
1.0
7
5
3
2
0.01
2
3
5
7 0.1
2SB986 /
2SD13
48
For PNP minus sign is omitted.
2
3
5
7 1.0
2
3
5
0.01
0.1
2SB986 / 2SD1348
For PNP minus sign is omitted.
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
1.4
ITR08820
12
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
5 7 100
ITR08821
PC -- Tc
2SB986 /
2SD1348
Collector Dissipation, PC -- W
2SB986 /
2SD1348
1.2
Collector Dissipation, PC -- W
10
1.0
8
0.8
No
he
at
0.6
sin
6
k
4
0.4
0.2
0
0
20
40
60
80
100
120
140
160
2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR08822
Case Temperature, Tc --
°C
ITR08823
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2009. Specifications and information herein are subject
to change without notice.
PS No.1245-4/4
京公网安备 11010802033920号
EEWORLD
