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2SK2499-Z-E1-AZ

Description
2SK2499-Z-E1-AZ
CategoryDiscrete semiconductor    The transistor   
File Size315KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2499-Z-E1-AZ Overview

2SK2499-Z-E1-AZ

2SK2499-Z-E1-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeMP-25Z
package instruction,
Contacts3
Manufacturer packaging codePRSS0004AJ-B3
Reach Compliance Codecompli
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK2499-Z-E1-AZ Related Products

2SK2499-Z-E1-AZ 2SK2499-Z-AZ 2SK2499-Z 2SK2499-AZ 2SK2499
Description 2SK2499-Z-E1-AZ 2SK2499-Z-AZ 50A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, 3 PIN 2SK2499-AZ 50A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PACKAGE-3
Parts packaging code MP-25Z MP-25Z SFM MP-25 TO-220AB
package instruction , , SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3
Reach Compliance Code compli compli unknow compli unknow
Base Number Matches 1 1 1 1 1
Brand Name Renesas Renesas - Renesas -
Is it Rohs certified? conform to conform to - conform to incompatible
Manufacturer packaging code PRSS0004AJ-B3 PRSS0004AJ-B3 - PRSS0004AH-A3 -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - 260 NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
ECCN code - - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - - 250 mJ 250 mJ 250 mJ
Shell connection - - DRAIN DRAIN DRAIN
Configuration - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - - 60 V 60 V 60 V
Maximum drain current (Abs) (ID) - - 50 A 50 A 50 A
Maximum drain current (ID) - - 50 A 50 A 50 A
Maximum drain-source on-resistance - - 0.014 Ω 0.014 Ω 0.014 Ω
FET technology - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - - R-PSSO-G2 R-PSFM-T3 R-PSFM-T3
Number of components - - 1 1 1
Number of terminals - - 2 3 3
Operating mode - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - - 150 °C 150 °C 150 °C
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - - 75 W 75 W 75 W
Maximum pulsed drain current (IDM) - - 200 A 200 A 200 A
Certification status - - Not Qualified Not Qualified Not Qualified
surface mount - - YES NO NO
Terminal form - - GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location - - SINGLE SINGLE SINGLE
transistor applications - - SWITCHING SWITCHING SWITCHING
Transistor component materials - - SILICON SILICON SILICON
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