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2SD1623T

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size34KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SD1623T Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN

2SD1623T Parametric

Parameter NameAttribute value
Objectid1481159200
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)580 ns
Maximum opening time (tons)60 ns
Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
Package Dimensions
unit : mm
2038A
[2SB1123 / 2SD1623]
4.5
1.6
1.5
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5
4.25max
0.4
Specifications
( ) : 2SB1123
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Ratings
(--)60
(--)50
(-
-)6
(-
-)2
(-
-)4
0.5
Unit
V
V
V
A
A
W
W
°C
°C
Mounted on a ceramic board (250mm
!0.8mm)
2
1.3
150
--55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE(1)
Conditions
VCB=(--)50V, IE=0
VEB=(-
-)4V, IC=0
VCE=(--)2V, IC=(--)100mA
100*
40
Ratings
min
typ
max
(-
-)100
(-
-)100
560*
Unit
nA
nA
hFE(2)
VCE=(--)2V, IC=(--)1.5A
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
T
U
100 to 200 140 to 280 200 to 400 280 to 560
hFE
Marking 2SB1123 : BF
2SD1623 : DF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5
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