High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Features
1) High transition frequency. (Typ. f
T
= 3.2GHz)
2) Small rbb’Cc and high gain. (Typ. 4ps)
3) Small NF.
Dimensions
(Unit : mm)
2SC5662
(3)
0.2
0.22
(1)(2)
0.8
1.2
0.4 0.4
0.8
0.13
0.5
0.2
1.2
0.32
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit
(pieces)
2SC5662
VMT3
NP
AD
T2L
8000
2SC4726
EMT3
NP
AD
TL
3000
2SC4083
UMT3
NP
1D
T106
3000
2SC3838K
SMT3
NP
AD
T146
3000
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
2SC4726
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.5 0.5
0.2
0.15
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
1.0
(1) Emitter
(2) Base
(3) Collector
2SC4083
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC5662, 2SC4726
Collector power
dissipation
2SC4083, 2SC3838K
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
20
11
3
50
0.15
0.2
150
−55
to
+150
Unit
V
V
V
mA
W
°C
°C
ROHM : SMT3
EIAJ : SC-59
ROHM : UMT3
EIAJ : SC-70
2.1
0.65 0.65
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
2.9
0.4
(3)
2SC3838K
1.1
0.8
(2)
(1)
1.6
2.8
0.1Min.
0.3Min.
0.95 0.95
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SC5662, 2SC4726,
2SC4083, 2SC3838K
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
r
bb'
⋅
Cc
NF
Min.
20
11
3
−
−
−
56
1.4
−
−
−
Typ.
−
−
−
−
−
−
−
3.2
0.8
4
3.5
Max.
−
−
−
0.5
0.5
0.5
180
−
1.5
12
−
Unit
V
V
V
μA
μA
V
−
GHz
pF
ps
dB
I
C
=
10μA
I
C
=
1mA
I
E
=
10μA
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
10mA/5mA
V
CE
/I
C
=
10V/5mA
V
CE
=
10V , I
E
=
−
10mA , f
=
500MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CB
=
10V , I
C
=
10mA , f
=
31.8MHz
V
CE
=
6V , I
C
=
2mA , f
=
500MHz , Rg
=
50Ω
Conditions
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c
○
2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.01 - Rev.D
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Electric
characteristics curves
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
Data Sheet
500
DC CURRENT TRANSFER RATIO : h
FE
TRANSITIONFREQUENCY : f
T
(GHz)
Ta=25
°C
V
CE
=10V
500
Ta=25
°C
5.0
200
100
200
100
2.0
1.0
50
50
I
C
/I
B
=10
0.5
20
10
0.1 0.2
20
I
C
/I
B
=2
0.2
0.1
−0.1 −0.2
Ta=25
°C
V
CE
=10V
−5 −10 −20
−50
0.5 1
2
5
10
20
50
10
0.1 0.2
0.5
1
2
5
10
20
50
−0.5 −1
−2
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage
vs. collector current
Fig.3 Gain bandwidth product
vs. emitter current
rbb'
(ps)
5.0
OUTPUT CAPACITANCE : C
ob
(pF)
FEEDBACK CAPACITANCE : C
re
(pF)
COLLECTOR TO BASE TIME CONSTANT : C
c
NOISE FIGURE : NF
(dB)
Ta=25
°C
f=1MHz
I
E
=0A
50
Ta=25
°C
V
CE
=10V
f=31.8MHz
Ta=25
°C
V
CE
=6V
f=500MHz
2.0
1.0
20
10
20
Cob
Cre
0.5
5.0
10
0.2
0.1
0.1 0.2
2.0
1.0
0.1 0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
0
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Capacitance vs. reverse bias voltage
Fig.5 Collector to base time constance
vs. collector current
Fig.6 Noisfactor vs.
collector current characteristics
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c
○
2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.01 - Rev.D
Notice
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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