Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3152
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage (V
CBO
≥900V)
・Fast
switching speed
・Wide
ASO（Safe Operating Area）
APPLICATIONS
・800V/3A
Switching Regulator Applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
900
800
7
3
10
1.5
UNIT
V
V
V
A
A
A
W
℃
℃
T
C
=25℃
80
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
CONDITIONS
I
C
=5mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=1.5A ;I
B
=0.3A
I
C
=1.5A;I
B
=0.3A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.2A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
10
8
MIN
800
900
7
2SC3152
TYP.
MAX
UNIT
V
V
V
2.0
1.5
10
10
40
V
V
μA
μA
Switching times
t
on
t
s
t
f
固电
Fall time
Transition frequency
导½
半
ANG
CH
IN
Turn-on time
Storage time
MIC
E SE
I
C
=0.2A ; V
CE
=10V
DUC
ON
60
15
OR
T
1.0
3.0
0.7
pF
MHz
μs
μs
μs
I
C
=2A;I
B1
=0.4A;I
B2
=-0.8A
R
L
=20Ω,V
CC
=400V
h
FE-1
classifications
K
10-20
L
15-30
M
20-40
2
Embedded System
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