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2SK369-V

Description
TRANSISTOR 30 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size371KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK369-V Overview

TRANSISTOR 30 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal

2SK369-V Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instruction2-5F1D, SC-43, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.03 A
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK369
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK369
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Y
fs
|: |Y
fs
| = 40 mS (typ.) (V
DS
= 10 V, V
GS
= 0, I
DSS
= 5 mA)
High breakdown voltage: V
GDS
=
−40
V (min)
Super low noise: NF = 1.0dB (typ.)
(V
DS
= 10 V, I
D
= 5 mA, f = 1 kHz, R
G
= 100
Ω)
High input impedance: I
GSS
=
−1
nA (max) (V
GS
=
−30
V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−40
10
400
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
JEDEC
TO-92
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note 1)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF (1)
Noise figure
(Note 2)
NF (2)
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz,
(I
DSS
=
5 mA)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= −10
V, I
D
=
0, f
=
1 MHz
V
DS
=
10 V, R
G
=
100
Ω,
I
D
=
5 mA,
f
=
100 Hz
V
DS
=
10 V, R
G
=
100
Ω,
I
D
=
5 mA,
f
=
1 kHz
Min
−40
5.0
−0.3
25
Typ.
40
75
15
5
1
Max
−1.0
30
−1.2
10
dB
2
Unit
nA
V
mA
V
mS
pF
pF
Note 1: I
DSS
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (VDS
<
15 V) for low noise applications.
1
2007-11-01

2SK369-V Related Products

2SK369-V 2SK369-GR
Description TRANSISTOR 30 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal
Parts packaging code TO-92 TO-92
package instruction 2-5F1D, SC-43, 3 PIN 2-5F1D, SC-43, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V
Maximum drain current (ID) 0.03 A 0.01 A
FET technology JUNCTION JUNCTION
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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