Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
•
Package Dimensions
unit : mm
2038A
[2SB1123 / 2SD1623]
4.5
1.6
1.5
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5
4.25max
0.4
Specifications
( ) : 2SB1123
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Ratings
(--)60
(--)50
(-
-)6
(-
-)2
(-
-)4
0.5
Unit
V
V
V
A
A
W
W
°C
°C
Mounted on a ceramic board (250mm
!0.8mm)
2
1.3
150
--55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE(1)
Conditions
VCB=(--)50V, IE=0
VEB=(-
-)4V, IC=0
VCE=(--)2V, IC=(--)100mA
100*
40
Ratings
min
typ
max
(-
-)100
(-
-)100
560*
Unit
nA
nA
hFE(2)
VCE=(--)2V, IC=(--)1.5A
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
T
U
100 to 200 140 to 280 200 to 400 280 to 560
hFE
Marking 2SB1123 : BF
2SD1623 : DF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5
2SB1123 / 2SD1623
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
IC=(--)10µA, IE=0
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(-
-)60
(-
-)50
(--)6
(60)60
(450)550
(30)30
Ratings
min
typ
150
(22)12
(--0.3)0.15
(--)0.9
(-
-0.7)0.4
(--)1.2
max
Unit
MHz
pF
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
RB
IB2
OUTPUT
VR
50Ω
RL=50Ω
+
100µF
--5V
+
470µF
25V
10IB1= --10IB2=IC=500mA
(For PNP, the polarity is reversed)
--2.4
IC -- VCE
2SB1123
Pulse
2.4
IC -- VCE
50m
A
A
40m
2SD1623
Pulse
--2.0
Collector Current, IC -- A
--20
--1.6
Collector Current, IC -- A
0m
--5
A
2.0
mA
25mA
1.6
--10mA
--1.2
15mA
8mA
--8mA
--6mA
1.2
--0.8
--4mA
0.8
4mA
--0.4
--2mA
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
0.4
2mA
IB=0
0
0.4
0.8
1.2
1.6
2.0
2.4
ITR08892
0
0
ITR08891
1200
Collector-to-Emitter Voltage, VCE -- V
--1200
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
--1000
--7mA
--6mA
2SB1123
Pulse
Collector Current, IC -- mA
1000
7mA
6mA
2SD1623
Pulse
5mA
Collector Current, IC -- mA
--5mA
--800
--4mA
--3mA
--2mA
800
4mA
--600
600
3mA
--400
400
2mA
--1mA
--200
200
1mA
IB=0
0
2
4
6
8
10
12
ITR08894
0
0
--2
--4
--6
--8
IB=0
--10
--12
ITR08893
0
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.1727-2/5
2SB1123 / 2SD1623
--1200
IC -- VBE
2SB1123
VCE= --2V
1200
IC -- VBE
2SD1623
VCE=2V
--1000
1000
Collector Current, IC -- mA
--800
Collector Current, IC -- mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
800
--600
600
--400
400
--200
200
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08896
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR08895
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SB1123
VCE= --2V
DC Current Gain, hFE
2SD1623
VCE=2V
DC Current Gain, hFE
3
2
3
2
100
7
5
3
2
10
--10
100
7
5
3
2
10
2
3
5
7 --100
2
3
5
7 --1000
2
3
5
10
2
3
5
7 100
2
3
5
7 1000
2
3
5
Collector Current, IC -- mA
1000
ITR08897
1000
f T -- IC
Collector Current, IC -- mA
ITR08898
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5
3
2
Gain-Bandwidth Product, f T -- MHz
7
2SB1123
VCB=10V
7
5
3
2
2SD1623
VCB=10V
100
7
5
3
2
10
--10
100
7
5
3
2
10
2
3
5
7 --100
2
3
5
7 --1000
2
3
10
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC -- mA
2
ITR08899
100
Cob -- VCB
Collector Current, IC -- mA
ITR08900
Cob -- VCB
2SB1123
f=1MHz
Output Capacitance, Cob -- pF
100
7
5
7
2SD1623
f=1MHz
Output Capacitance, Cob -- pF
2
3
5
7
2
3
5
7 --100
ITR08901
5
3
3
2
2
10
7
5
1.0
10
7
5
--1.0
--10
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
100
ITR08902
7
No.1727-3/5
2SB1123 / 2SD1623
--100
5
VCE(sat) -- IC
2SB1123
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
100
5
2
10
5
2
1.0
5
2
0.1
5
2
0.01
VCE(sat) -- IC
2SD1623
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--10
5
2
--1.0
5
2
--0.1
5
2
--0.01
--10
2
3
5
7 --100
2
3
5
7 --1000
2
3
10
2
3
5
7
100
2
3
5
7 1000
2
3
Collector Current, IC -- mA
10
5
3
ITR08903
0.8
ASO
Collector Current, IC -- mA
ITR08904
PC -- Ta
2SB1123 / 2SD1623
2SB1123 / 2SD1623
ICP=4A
IC=2A
Collector Dissipation, PC -- W
s
1m
Collector Current, IC -- A
2
1.0
5
3
2
0.1
5
3
2
5
0.6
0.5
0.4
s
0m
10
10
ms
DC
op
era
t
ion
No
0.2
he
at
sin
k
Ta=25°C
Single pulse
For PNP, minus sign is omitted
Mounted on a ceramic board(250mm
2
!0.8mm)
7
1.0
2
3
5
7
10
2
3
5
0
100
ITR08906
7
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
1.6
1.4
Ambient Temperature, Ta --
°C
IT04221
PC -- Tc
2SB1123 / 2SD1623
Collector Dissipation, PC -- W
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
M
ou
nte
do
na
ce
ram
ic
bo
ard
(2
50
m
m
2
!
0
.8m
m)
120
140
160
40
60
80
100
Case Temperature, Tc --
°C
IT04222
No.1727-4/5
2SB1123 / 2SD1623
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Nobember, 2001. Specifications and information herein are subject
to change without notice.
PS No.1727-5/5
RF/Wirelessly
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