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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain:
S
21e
= 12 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
2
• 4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
2SC5336
2SC5336-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Supplying Form
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
1.2
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1996, 2001
TI Technology Forum
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