Ordering number:ENN2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
Æ Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit:mm
2038A
[2SB1124/2SD1624]
4.5
1.6
Features
Æ Adoption of FBET, MBIT processes.
Æ Low collector-to-emitter saturation voltage.
Æ Fast switching speed.
Æ Large current capacity and wide ASO.
0.4
3
1.5
1.5
0.5
2
3.0
0.75
1
1.0
2.5
4.25max
0.4
( ) : 2SB1124
Specifications
Absolute Maximum Ratings
at Ta = 25ßC
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
Tj
Tstg
Mounted on ceramic board (250mm
×0.8mm)
2
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Conditions
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
500
1.5
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Electrical Characteristics
at Ta = 25ßC
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
VCE=(–)10V, IC=(–)50mA
100*
35
150
MH z
Conditions
Ratings
min
typ
max
(–)1
(–)1
560*
Unit
µA
µA
* ; The 2SB1124/2SD1624 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Marking 2SB1124 : BG
2SD1624 : DG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019—1/4
2SB1124/2SD1624
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)2A, IB=(–)100mA
Ratings
min
typ
(39)
25
(–0.35)
0.19
(–0.94)
(–)60
(–)50
(–)6
70
(70)
650
(450)
35
(35)
(–0.7)
0.5
(–)1.2
max
Unit
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
VBE(sat) IC=(–)2A, IB=(–)100mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
RB
IB2
OUTPUT
VR
50Ω
25Ω
+
100µF
--5V
+
470µF
25V
10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
--5.0
--4.5
IC -- VCE
2SB1124
5.0
IC -- VCE
2SD1624
--20
0mA
4.5
Collector Current, IC — A
Collector Current, IC — A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.4
--0.8
--1.2
mA
--100
4.0
3.5
3.0
2.5
2.0
1.5
A
100m
80mA
60mA
--50mA
--20mA
--10mA
--5mA
40mA
20mA
10mA
5mA
1.0
0.5
IB=0
--1.6
--2.0
ITR08907
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
ITR08908
Collector-to-Emitter Voltage, VCE — V
--2.0
--1.8
Collector-to-Emitter Voltage, VCE — V
2.0
1.8
IC -- VCE
mA
--14
--12m
A
2SB1124
IC -- VCE
8mA
7mA
2SD1624
Collector Current, IC — A
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2
--4
--6
--8
--10
--8mA
--6mA
Collector Current, IC — A
--1.6
--10mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6mA
5mA
--4mA
4mA
3mA
2mA
1mA
--2mA
0.2
IB=0
--12
--14
--16
--18
--20
0
0
2
4
6
8
10
12
14
ITR08909
IB=0
16
18
20
Collector-to-Emitter Voltage, VCE — V
Collector-to-Emitter Voltage, VCE — V
ITR08910
No.2019—2/4
2SB1124/2SD1624
--3.2
--2.8
IC -- VBE
2SB1124
VCE= --2V
Collector Current, IC — A
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
IC -- VBE
2SD1624
VCE=2V
Collector Current, IC — A
--2.4
--2.0
--1.6
Ta=7
5
°
C
25
°
C
--25
°
C
--1.2
--0.8
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
Ta=
75
°
25
°
C
C
--25
°
C
0.8
1.0
1.2
ITR08912
Base-to-Emitter Voltage, VBE — V
1000
7
5
ITR08911
1000
7
5
Base-to-Emitter Voltage, VBE — V
hFE -- IC
2SB1124
VCE= --2V
Ta=75°C
hFE -- IC
2SD1624
VCE=2V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
25°C
Ta=75°C
25°C
--25°C
100
7
5
3
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--25
°C
100
7
5
3
2
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC — A
1000
ITR08913
5
3
2
Collector Current, IC — A
ITR08914
f T -- IC
2SB1124 /
2SD1624
VCE=10V
Output Capacitance, Cob -- pF
Cob -- VCB
2SB1124 /
2SD1624
f=1MHz
Gain-Bandwidth Product, fT — MHz
7
5
3
2
100
7
5
3
2
2SD
162
4
2SB
1124
10
7
5
3
2
124
2SD
162
4
2SB1
10
0.01
For PNP, minus sign is omitted.
2
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC — A
--1000
7
10
ITR08915
5
1.0
1.0
For PNP, minus sign is omitted.
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
1000
7
7 100
ITR08916
VCE(sat) -- IC
2SB1124
IC / IB=20
VCE(sat) -- IC
2SD1624
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) — mV
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) — mV
5
3
2
--100
7
5
3
2
100
7
5
3
2
25
°
C
Ta
-2 5
=-
°
C
C
75
°
25
°
C
C
Ta=75
°
--25
°
C
7 0.01
2
3
5
7 0.1
2
3
5 7 1.0
2
3
5
--10
7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
3
5
10
Collector Current, IC — A
ITR08917
Collector Current, IC — A
ITR08918
No.2019—3/4
2SB1124/2SD1624
--10
7
VBE(sat) -- IC
2SB1124
IC / IB=20
10
7
VBE(sat) -- IC
2SD1624
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
5
3
2
3
2
--1.0
7
5
--25
°C
25
°C
1.0
7
5
Ta=
--25
°C
75
°C
25
°C
Ta=75
°C
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
3
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC — A
10
5
3
ITR08919
1.8
1.6
1.5
Collector Current, IC — A
ITR08920
ASO
ICP=6A
IC=3A
PC -- Ta
2SB1124 / 2SD1624
2SB1124 /
2SD1624
Collector Dissipation, P
C
— W
Collector Current, IC — A
10
1
0m
0m
s
s
s
1m
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.2
0
M
2
1.0
5
3
2
0.1
5
3
2
ou
nt
ed
DC
on
c
op
er
era
am
tio
ic
n
bo
ar
d(
2
50
m
Ta=25°C
Single pulse
Mounted on ceramic board(250mm
2
×0.8mm)
For PNP, minus sign is omitted.
3
5
7 1.0
2
3
5
7 10
2
3
No h
ea
t sink
m
2
×
0
.8
m
m
)
Collector-to-Emitter Voltage, VCE — V
7 100
ITR08921
5
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta — ßC
ITR08922
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2019—4/4
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EEWORLD
