2SK1510-01L datasheet, PDF - EEWORLD Datasheet

2SK1510-01L: DescriptionPower Field-Effect Transistor, 3.5A I(D), 900V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size165KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK1510-01L Overview

Power Field-Effect Transistor, 3.5A I(D), 900V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	5.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	9 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2SK1510-01L	2SK1510-01S
Description	Power Field-Effect Transistor, 3.5A I(D), 900V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3.5A I(D), 900V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknow
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V	900 V
Maximum drain current (Abs) (ID)	3.5 A	3.5 A
Maximum drain current (ID)	3.5 A	3.5 A
Maximum drain-source on-resistance	5.5 Ω	5.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	60 W	60 W
Maximum pulsed drain current (IDM)	9 A	9 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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