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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD1624R
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2SD1624R

Description
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size442KB，3 Pages
ManufacturerMicro Commercial Components (MCC)
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2SD1624R Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

2SD1624R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

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20736 Marilla
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2SD1624
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc)
Collector-Emitter Breakdown Voltage
(I
E
=10uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=3.0Adc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=2.0Adc,I
B
=100mAdc)
Gain-Bandwidth product
(V
CE
=10V, I
C
=50mA )
Out Capacitance
(V
CB
=10V, f=1.0MHz)
Turn-on Time
I
C
=1.0Adc
Storage Time
I
B1
=I
B2
=0.1Adc
Fall Time
R
100-200
S
140-280
Rating
50
60
6.0
3.0
6.0
500
-55 to +150
-55 to +150
Min
60
50
6.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
1.0
1.0
Unit
V
V
V
A
A
mW
O
C
O
C
Units
C
NPN Epitaxial
Planar Silicon
Transistors
SOT-89
A
B
K
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Vdc
Vdc
Vdc
uAdc
mAdc
1
2
3
E
D
G
F
H
J
ON CHARACTERISTICS
h
FE-1
h
FE-2
V
CE(sat)
V
BE(SAT)
f
T
Cob
ton
Tstg
tf
Rank
Range
100
35
---
---
---
---
---
---
---
---
---
---
0.35
0.19
0.94
150
25
70
650
35
560
---
0.7
0.5
1.2
---
---
---
---
----
---
---
Vdc
Vdc
MHz
pF
ns
ns
ns
U
280-560











1. Emitter
2. Collector
3. Base

 


 

 






















































hFE
[1]
CLASSIFICATION
T
200-400
www.mccsemi.com
Revision: 2
2003/04/30

2SD1624R Related Products

2SD1624R 2SD1624S 2SD1624T 2SD1624U SON-N954-07-1961-DC
Description Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN Array/Network Resistor, Bussed, Thin Film, 0.1W, 1960ohm, 50V, 0.5% +/-Tol, -25,25ppm/Cel, 2021,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code compli compli compli compli compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Number of terminals 3 3 3 3 8
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMT
Parts packaging code SOT-89 SOT-89 SOT-89 SOT-89 -
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 -
Contacts 3 3 3 3 -
Maximum collector current (IC) 3 A 3 A 3 A 3 A -
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V -
Configuration SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 100 140 200 280 -
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 -
JESD-609 code e0 e0 e0 e0 -
Number of components 1 1 1 1 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Peak Reflow Temperature (Celsius) 240 240 240 240 -
Polarity/channel type NPN NPN NPN NPN -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount YES YES YES YES -
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
Terminal form FLAT FLAT FLAT FLAT -
Terminal location SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature 30 30 30 30 -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz -
Base Number Matches 1 1 1 1 -

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