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2N5610

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size50KB,2 Pages
ManufacturerInchange Semiconductor
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2N5610 Overview

Transistor

2N5610 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max1.5 V
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2N5610
DESCRIPTION
·DC
Current Gain-
: h
FE
= 70-200@I
C
= 2.5A
·Wide
Area of Safe Operation
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 80V(Min)
·Complement
to Type 2N5609
APPLICATIONS
·Designed
for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
100
80
6
5
25
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website:www.iscsemi.cn

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