INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2N5610
DESCRIPTION
·DC
Current Gain-
: h
FE
= 70-200@I
C
= 2.5A
·Wide
Area of Safe Operation
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 80V(Min)
·Complement
to Type 2N5609
APPLICATIONS
·Designed
for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
100
80
6
5
25
150
-65~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N5610
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 50mA ; I
B
= 0
80
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
1.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
2.2
V
I
CEO
Collector Cutoff Current
V
CE
= 80V; I
B
= 0
1.0
mA
I
CBO
Collector Cutoff Current
V
CB
= 100V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
= 0
0.1
mA
h
FE
DC Current Gain
I
C
= 2.5A ; V
CE
= 5V
70
200
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A ; V
CE
= 10V
60
MHz
isc Website:www.iscsemi.cn
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