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2SK371-GR

Description
TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size758KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK371-GR Overview

TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SK371-GR Parametric

Parameter NameAttribute value
package instruction2-4E1C, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.01 A
FET technologyJUNCTION
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK371
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK371
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Y
fs
|: |Y
fs
| = 40 mS (typ.) (V
DS
= 10 V, V
GS
= 0, I
DSS
= 5 mA)
High breakdown voltage: V
GDS
=
−40
V
Super low noise: NF = 1.0dB (typ.)
(V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
G
= 100
Ω)
High input impedance: I
GSS
=
−1
nA (max) (V
GS
=
−30
V)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−40
10
200
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1C
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note 1)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF (1)
Noise figure
(Note 2)
NF (2)
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz,
(typ.: I
DSS
=
5 mA)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 V, R
G
=
100
Ω,
I
D
=
5 mA,
f
=
100 Hz
V
DS
=
10 V, R
G
=
100
Ω,
I
D
=
5 mA,
f
=
1 kHz
Min
−40
5.0
−0.3
25
Typ.
40
75
15
5
1
Max
−1.0
30
−1.2
10
dB
2
Unit
nA
V
mA
V
mS
pF
pF
Note 1: I
DSS
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (V
DS
<
15 V) for low noise applications.
1
2007-11-01

2SK371-GR Related Products

2SK371-GR 2SK371-BL 2SK371-V
Description TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal TRANSISTOR 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal TRANSISTOR 30 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
package instruction 2-4E1C, 3 PIN 2-4E1C, 3 PIN 2-4E1C, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V 40 V
Maximum drain current (ID) 0.01 A 0.016 A 0.03 A
FET technology JUNCTION JUNCTION JUNCTION
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Parts packaging code - TO-92 TO-92

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