2SK2596BX datasheet, PDF - EEWORLD Datasheet

2SK2596BX: DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size143KB，1 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SK2596BX Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	17 V
Maximum drain current (ID)	0.4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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