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2N5610E3

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N5610E3 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3

2N5610E3 Parametric

Parameter NameAttribute value
Objectid8059220405
package instructionMETAL CAN-3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON

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Index Files: 1661  2677  724  1403  589  34  54  15  29  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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