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2SK2596BXTR

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size143KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK2596BXTR Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

2SK2596BXTR Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage17 V
Maximum drain current (ID)0.4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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