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2SK372-Y

Description
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size184KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SK372-Y Overview

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SK372-Y Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
FET technologyJUNCTION
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK372
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
·
·
·
·
High breakdown voltage: V
GDS
=
−40
V
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−30
V)
Low R
DS (ON)
: R
DS (ON)
= 20
(typ.) (I
DSS
=
15
mA)
Small package
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
-40
10
200
125
-55~125
Unit
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-4E1C
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note 1)
V
GS (OFF)
ïY
fs
ï
C
iss
C
rss
R
DS (ON)
Test Condition
V
GS
= -30
V, V
DS
=
0
V
DS
=
0, I
G
= -100 mA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
mA
Weight: 0.13 g (typ.)
Min
¾
-40
5.0
-0.3
25
¾
¾
(Note 2)
¾
Typ.
¾
¾
¾
¾
60
75
15
20
Max
-1.0
¾
30
-1.2
¾
¾
¾
¾
Unit
nA
V
mA
V
mS
pF
pF
W
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz (Note 2)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 mV, V
GS
=
0
Note 1: I
DSS
classification
GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, Y: 14.0~30.0 mA
Note 2: Concition of the typical value I
DSS
=
15 mA
1
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