EEWORLDEEWORLDEEWORLD

Part Number

Search

2SC4098T106/Q

Description
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size69KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC4098T106/Q Overview

Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN

2SC4098T106/Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.3 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
VCEsat-Max0.3 V
Base Number Matches1
Transistors
2SC5659 / 2SC4618 / 2SC4098 /
2SC2413 / 2SC2058S
High-frequency Amplifier Transistor
(25V, 50mA, 300MHz)
2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /
2SC2058S
!Features
1) Low collector capacitance. (Cob : Typ. 1.3pF)
2) Low rbb, high gain, and excellent noise characteristics.
!
External dimensions
(Units : mm)
2SC5659
0.2
1.2
0.32
1.2
0.8
(2)
(3)
(1)
0.2
0.4 0.4
0.8
ROHM : VMT3
Unit
V
V
V
mA
W
˚C
˚C
0.13
0to0.1
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SC5659, 2SC4618
2SC4098, 2SC2413K
2SC2058S
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
25
5
50
0.15
0.2
0.3
150
−55~+150
0.5
0.22
0.15Max.
(1) Base
(2) Emitter
(3) Collector
(1)
(2)
0.2
0.5 0.5
2SC4618
0.3
(3)
1.0
0.8
1.6
0.15
0.55
0.7
Junction temperature
Storage temperature
0.2
1.6
0.1Min.
0.65 0.65
Type
Package
h
FE
Marking
Code
Basic ordering unit
(pieces)
FE
2SC5659
VMT3
NPQ
A
T2L
2SC4618
EMT3
NPQ
A
TL
2SC4098
UMT3
NPQ
A
T106
3000
2SC2413K 2SC2058S
SMT3
NPQ
A
T146
3000
SPT
P
TP
5000
0.3
(3)
1.25
2.1
0.15
0.2
(2)
8000
3000
Denotes h
ROHM : UMT3
EIAJ : SC-70
0.1to0.4
0to0.1
0.7
0.9
1.3
2.0
!
Packaging specifications and h
FE
(1)
2SC4098
0to0.1
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
2SC2413K
0.4
(3)
(1)
1.6
2.8
0.15
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
0to0.1
0.8
1.1
0.95 0.95
1.9
2.9
(2)
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
2SC5058S
3
4
2
(15Min.)
3Min.
0.45
2.5
5
0.5 0.45
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base

2SC4098T106/Q Related Products

2SC4098T106/Q 2SC2413KT146/N 2SC2413KT146/Q 2SC4618TL/N 2SC4618TL/Q 2SC4098T106/N
Description Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, SC-75A, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, SC-75A, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code SC-70 SC-59 SC-59 SC-75A SC-75A SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 56 120 56 120 56
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 e1 e1 e1 e1 e1
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.15 W 0.15 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
Base Number Matches 1 1 1 1 1 1
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2256  937  2659  1390  667  46  19  54  28  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号