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2SC3632L

Description
TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size255KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SC3632L Overview

TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252

2SC3632L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

2SC3632L Related Products

2SC3632L 2SC3632K
Description TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252 TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknow unknow
Maximum collector current (IC) 1 A 1 A
Configuration Single Single
Minimum DC current gain (hFE) 40 60
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 10 W 10 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1
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