RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 17 V |
| Maximum drain current (ID) | 0.4 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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