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2SD2276S

Description
Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3L-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size82KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SD2276S Overview

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3L-A1, 3 PIN

2SD2276S Parametric

Parameter NameAttribute value
Parts packaging codeTO-3LA1
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)8 A
Collector-emitter maximum voltage140 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)7000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)120 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Power Transistors
2SD2276
Silicon NPN triple diffusion planar type darlington
(10.0) (6.0)
(2.0)
(4.0)
For power amplification
Complementary to 2SB1503
Features
Optimum for 110 W Hi-Fi output
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Unit: mm
20.0
±0.5
φ
3.3
±0.2
5.0
±0.3
(3.0)
26.0
±0.5
(3.0)
(1.5)
2.0
±0.3
3.0
±0.3
1.0
±0.2
0.6
±0.2
5.45
±0.3
10.9
±0.5
(1.5)
2.7
±0.3
1
2
3
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
160
140
5
8
15
120
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
20.0
±0.5
(2.5)
Solder Dip
(1.5)
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
C
B
E
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
30 mA, I
B
=
0
V
CB
=
160 V, I
E
=
0
V
CE
=
140 V, I
B
=
0
V
EB
=
50 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
7 A
I
C
=
7 A, I
B
=
7 mA
I
C
=
7 A, I
B
=
7 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
7 A, I
B1
=
7 mA, I
B2
= −7
mA,
V
CC
=
50 V
20
2.0
6.0
1.2
2 000
5 000
30 000
2.5
3.0
V
V
MHz
µs
µs
µs
Min
140
100
100
100
Typ
Max
Unit
V
µA
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
S
P
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
(2.0)
Publication date: September 2003
SJD00259BED
1

2SD2276S Related Products

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Description Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3L-A1, 3 PIN Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3L-A1, 3 PIN Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3L-A1, 3 PIN
Parts packaging code TO-3LA1 TO-3LA1 TO-3LA1
package instruction FLANGE MOUNT, R-PSFM-T3 TOP-3L-A1, 3 PIN TOP-3L-A1, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 8 A 8 A 8 A
Collector-emitter maximum voltage 140 V 140 V 140 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 7000 5000 8000
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 120 W 120 W 120 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1
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