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DTC143EM-T2L

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTC143EM-T2L Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 PIN

DTC143EM-T2L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompliant
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC143E series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
l
Outline
Parameter
V
CC
I
C(MAX.)
R
1
R
2
Value
50V
100mA
4.7kΩ
4.7kΩ
VMT3
EMT3F
 
DTC143EM
(SC-105AA)
EMT3
 
DTC143EEB
(SC-89)
UMT3F
l
Features
1) Built-In Biasing Resistors, R
1
= R
2
= 4.7kΩ
2) Built-in bias resistors enable the configuration of
 
an inverter circuit without connecting external
 
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 
for operation, making the circuit design easy.
4) Complementary PNP Types: DTA143E series
 
DTC143EE
SOT-416(SC-75A)
UMT3
 
DTC143EUB
(SC-85)
SMT3
 
DTC143EUA
SOT-323(SC-70)
 
DTC143EKA
SOT-346(SC-59)
l
Application
INVERTER, INTERFACE,DRIVER
l
Inner circuit
DTC143EM/ DTC143EEB/ DTC143EUB
DTC143EE/ DTC143EUA/ DTC143EKA
l
Packaging specifications
                                           
Part No.
DTC143EM
DTC143EEB
DTC143EE
DTC143EUB
DTC143EUA
DTC143EKA
Package
VMT3
EMT3F
EMT3
UMT3F
UMT3
SMT3
Package
size
1212
1616
1616
2021
2021
2928
Taping
code
T2L
TL
TL
TL
T106
T146
1/10
Reel size Tape width
(mm)
(mm)
180
180
180
180
180
180
8
8
8
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
3000
3000
3000
Marking
23
23
23
23
23
23
                                                                                         
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
20150311 - Rev.003

DTC143EM-T2L Related Products

DTC143EM-T2L DTC143EUA-T106 DTC143EKA-T146 DTC143EE-TL DTC143EUB-TL DTC143EEB-TL
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UMT3F, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BAIS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30 30 30 30 30
JESD-30 code R-PDSO-F3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-F3 R-PDSO-F3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.2 W 0.2 W 0.15 W 0.2 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT GULL WING GULL WING GULL WING FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
JESD-609 code - e1 e1 e1 e1 e1
Terminal surface - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
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