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2SD1624T

Description
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size142KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SD1624T Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN

2SD1624T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1481159215
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)685 ns
Maximum opening time (tons)70 ns
Ordering number:2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit:mm
2038
[2SB1124/2SD1624]
Features
· Adoption of FBET, MBIT processes.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Large current capacity and wide ASO.
E : Emitter
C : Collector
B : Base
( ) : 2SB1124
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
SANYO : PCP
(Bottom view)
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
500
Unit
V
V
V
A
A
mW
W
Mounted on ceramic board (250mm
×0.8mm)
2
1.5
150
–55 to +150
Tj
Tstg
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
100*
35
150
(39)
25
MHz
pF
pF
Conditions
Ratings
min
typ
max
(–)1
(–)1
560*
Unit
µA
µA
* ; The 2SB1124/2SD1624 are classified by 100mA h
FE
as follows :
100
R
200
140
S
280
200
T
400
280
U
560
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/3307AT, TS No.2019–1/4
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