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2N5612

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size395KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
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Transistor

2N5612 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
surface mountNO
Nominal transition frequency (fT)60 MHz
Base Number Matches1
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