Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5612A
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Low
collector saturation voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
固电
导½
半
PARAMETER
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector-emitter voltage
ES
NG
MIC
E
Open emitter
Open base
T
C
=25℃
CONDITIONS
OR
UCT
ND
O
VALUE
120
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
℃
℃
Open collector
Total power dissipation
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N5612A
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=50mA ;I
B
=0
100
V
V
CEsat
Collector-emitter saturation voltage
I
C
=1A; I
B
=0.1A
0.5
V
V
BE
Base-emitter on voltage
I
C
=2.5A ; V
CE
=5V
1.5
V
I
CBO
Collector cut-off current
V
CB
=Rated V
CBO
; I
E
=0
0.1
mA
I
CEO
Collector cut-off current
V
CE
= Rated V
CEO
,I
B
=0
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.1
mA
h
FE
DC current gain
f
T
固电
IN
Transition frequency
导½
半
I
C
=2.5A ; V
CE
=5V
30
150
I
C
=0.5A ; V
CE
=10V
ANG
CH
MIC
E SE
OR
UCT
ND
O
60
MHz
2
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