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2SD1628E

Description
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SD1628E Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN

2SD1628E Parametric

Parameter NameAttribute value
Objectid1481159224
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Maximum off time (toff)340 ns
Maximum opening time (tons)30 ns
Ordering number:EN1781A
NPN Epitaxial Planar Silicon Transistor
2SD1628
High-Current Switching Applications
Applications
· Strobe DC-DC converters, relay drivers, hammer
drivers, lamp drivers, motor drovers.
Package Dimensions
unit:mm
2038A
[2SD1628]
4.5
1.6
1.5
Features
· Low saturation voltage.
· High h
FE
.
· Large current capacity.
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
0.4
3
1.5
2
3.0
0.75
0.5
1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on ceramic board (250mm
2
×
0.8mm)
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Ratings
60
20
6
5
8
500
1.5
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
120*
95
120
45
MHz
pF
Conditions
Ratings
min
typ
max
100
100
560*
Unit
nA
nA
* The 2SD1628 is classified by 0.5A h
FE
as follows :
120
Marking : DK
E
200
160
F
320
280
G
560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/5277KI/3045MW, TS No.1781–1/4

2SD1628E Related Products

2SD1628E 2SD1628-E 2SD1628-F 2SD1628F 2SD1628-G 2SD1628G
Description Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN 5000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN 5000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 PCP, 3 PIN SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknow unknown unknow unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 160 160 280 280
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Objectid 1481159224 1481159224 - 1481159227 - 1481159230
ECCN code EAR99 EAR99 - EAR99 - EAR99
Maximum power dissipation(Abs) 0.5 W 0.5 W - 0.5 W - 0.5 W
Maximum off time (toff) 340 ns 340 ns - 340 ns - 340 ns
Maximum opening time (tons) 30 ns 30 ns - 30 ns - 30 ns
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