Ordering number:ENN3713
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1507/2SD2280
50V/7A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2039D
[2SB1507/2SD2280]
3.4
16.0
5.6
3.1
Features
· Low collector-to-emitter saturation voltage :
V
CE(sat)
=(–)0.4V max.
· Wide ASO and highly registant to breakdown.
· Micaless package facilitating easy mounting.
5.0
8.0
21.0
22.0
20.4
2.8
2.0
1.0
4.0
2.0
0.6
1
2
3
( ) : 2SB1507
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
3.5
Ratings
(–)60
(–)50
(–)6
(–)7
(–)20
3.0
40
150
–55 to +150
2.0
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Q
70 to 140
R
100 to 200
Conditions
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
S
140 to 280
Ratings
min
typ
max
(–)0.1
(–)0.1
70*
30
10
280*
Unit
mA
mA
MHz
* : The 2SB1507/2SD2280 are classified by 1A h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/N1098HA (KT)/5111MH, JK (KOTO) No.3713–1/4
2SB1507/2SD2280
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Ratings
min
(–)60
(–)50
(–)6
0.2
(0.7)
0.9
(0.1)
0.3
typ
max
(–)0.4
Unit
V
V
V
V
µs
µs
µs
µs
µs
VCE(sat) IC=(–)4A, IB=(–)0.4A
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20µs
tr, tf≤15ns
INPUT
IB1
IB2
1Ω
RB
VR
50Ω
100Ω
+
100µF
--5V
10IB1= --10IB2=IC=2A
(For PNP, the polarity is reversed.)
+
470µF
20V
RL
10Ω
OUTPUT
--12
IC -- VCE
2SB1507
mA
mA
00
00
A
A
--8
--6
400m
-1
-
-
-
--200m
A
12
IC -- VCE
0m
A
1A
60
--10
10
40
0m
A
2SD2280
Collector Current, IC – A
Collector Current, IC – A
200m
8
A
--8
--6
6
--100mA
--4
--80mA
--60mA
--40mA
--20mA
--10mA
IB=0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
100mA
80mA
60mA
40mA
4
--2
2
20mA
0
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE – V
--12
ITR09831
12
Collector-to-Emitter Voltage, VCE – V
ITR09832
IC -- VBE
2SB1507
VCE=
--2V
IC -- VBE
2SD2280
VCE=2V
--10
10
Collector Current, IC – A
Collector Current, IC – A
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--8
8
--6
6
--4
4
--2
2
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
ITR09833
Base-to-Emitter Voltage, VBE – V
ITR09834
No.3713–2/4
2SB1507/2SD2280
1000
7
5
3
hFE -- IC
2SB1507
VCE=
--2V
1000
7
5
3
hFE -- IC
2SD2280
VCE=2V
DC Current Gain, hFE
100
7
5
3
2
10
7
5
3
2
2
3
5
7 --0.1
2
3
5 7 --1.0
2
3
5
7 --10
2
ITR09835
DC Current Gain, hFE
2
2
100
7
5
3
2
10
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7
2
10
ITR09836
Collector Current, IC – A
--10
7
5
Collector Current, IC – A
10
5
VCE(sat) -- IC
2SB1507
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
VCE(sat) -- IC
2SD2280
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
3
3
2
1.0
5
3
2
0.1
5
3
2
2
3
5 7 0.1
2
IC / IB=20
IC / IB=10
5 7 --0.1
2
3
5
7 --1.0
2
3
=20
/ IB
IC
10
I B=
/
IC
3
5 7 1.0
2
3
5
7 10
2
ITR09838
Collector Current, IC – A
5 7 --10
2
ITR09837
0.01
Collector Current, IC – A
5
3
2
ASO
5
3
2
ASO
ICP=20A
PT
≤
100µs
ICP=–20A
IC=–7A
PT
≤
100µs
200µs
Collector Current, IC – A
--10
5
3
2
Collector Current, IC – A
10
5
3
2
1.0
5
3
2
0.1
200µs
s
0
µ
50
s
1m
ms
10
s
0m
s
0
µ
50
s
1m
s
m
10
s
0m
10
IC=7A
10
DC
DC
er
op
--1.0
5
3
2
--0.1
5
5
e
op
ion
rat
ati
on
2SB1507
100
µ
s to 100ms : Single pulse
Tc=25
°C
--1.0
2
3
5
Collector-to-Emitter Voltage, VCE – V
--10
2
3
5
5
2SD2280
100
µ
s to 100ms : Single pulse
Tc=25
°C
5
1.0
2
3
5
10
2
3
5
--100
ITR09839
50
Collector-to-Emitter Voltage, VCE – V
100
ITR09840
3.2
3.0
2.8
PC -- Ta
2SB1507 / 2SD2280
Collector Dissipation, P
C
– W
PC -- Ta
2SB1507 / 2SD2280
Collector Dissipation, P
C
– W
40
2.4
N
2.0
1.6
1.2
0.8
0.4
0
0
o
he
at
30
sin
k
20
10
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09841
Ambient Temperature, Ta – ˚C
ITR09842
No.3713–3/4
2SB1507/2SD2280
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3713–4/4
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