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2SK3820(SMP)

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SK3820(SMP) Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2SK3820(SMP) Parametric

Parameter NameAttribute value
Objectid106158737
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)26 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountNO
Ordering number : ENN8147
2SK3820
2SK3820
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
26
104
1.65
50
150
--55 to +150
84.5
26
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note : *1 VDD=20V, L=200µH, IAV=26A
*2 L≤200µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=13A
ID=13A, VGS=10V
ID=13A, VGS=4V
Ratings
min
100
1
±10
1.2
11
19
45
56
60
80
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3820
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005QA MS IM TB-00000899 No.8147-1/4

2SK3820(SMP) Related Products

2SK3820(SMP) 2SK3820-TL 2SK3820(SMP-FD)
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Objectid 106158737 2064451663 106158738
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO YES YES
Maximum drain current (Abs) (ID) 26 A - 26 A
Maximum operating temperature 150 °C - 150 °C
Maximum power dissipation(Abs) 50 W - 50 W
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