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2SC3183K

Description
TRANSISTOR,BJT,NPN,800V V(BR)CEO,200MA I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size105KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SC3183K Overview

TRANSISTOR,BJT,NPN,800V V(BR)CEO,200MA I(C),TO-220AB

2SC3183K Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
surface mountNO
Nominal transition frequency (fT)15 MHz
Base Number Matches1
Ordering number:EN1251A
NPN Triple Diffused Planar Silicon Transistor
2SC3183
800V/0.2A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥900V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SC3183]
JEDEC : TO-220AB
EIAJ
: SC-46
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
Conditions
Ratings
900
800
7
0.2
1
25
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
Cob
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=100mA
IC=100mA, IB=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
15
10
10*
8
2.0
V
MHz
pF
Conditions
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
* : The h
FE
1 of the 2SC3183 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
10
K
20
15
L
30
20
M
40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/4217KI/9073KI, TS No.1251–1/4

2SC3183K Related Products

2SC3183K 2SC3183M 2SC3183L
Description TRANSISTOR,BJT,NPN,800V V(BR)CEO,200MA I(C),TO-220AB TRANSISTOR,BJT,NPN,800V V(BR)CEO,200MA I(C),TO-220AB TRANSISTOR,BJT,NPN,800V V(BR)CEO,200MA I(C),TO-220AB
Reach Compliance Code compli compli compli
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Configuration Single Single Single
Minimum DC current gain (hFE) 10 15 15
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 25 W 25 W 25 W
surface mount NO NO NO
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1

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