2SK3874-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
280
280
56
±224
±30
56
1039.1
21
20
5
210
3.13
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=23A,L=3.37mH,
V
CC
=48V,R
G
=50Ω
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
< BV
DSS
,Tch< 150°C
kV/µs V
DS
<280V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
=
=
=
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
T
ch
=25°C
V
DS
=280V V
GS
=0V
T
ch
=125°C
V
DS
=224V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=28A V
GS
=10V
I
D
=28A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=180V I
D
=28A
V
GS
=10V
R
GS
=10
Ω
V
CC
=140V
I
D
=56A
V
GS
=10V
I
F
=56A V
GS
=0V T
ch
=25°C
I
F
=56A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
280
3.0
Typ.
Max.
5.0
25
250
100
61
Units
V
V
µA
nA
mΩ
S
pF
12
51
24
3600
5400
530
795
35
52.5
40
60
58
87
80
120
10
15
80
120
30
45
25
38
1.20
1.50
400
4.5
ns
nC
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.595
40.0
Units
°C/W
°C/W
1
2SK3874-01R
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
300
100
90
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V 10V 8V
250
80
70
200
60
PD [W]
150
ID [A]
7V
50
40
100
30
20
50
10
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
6
7
6.5V
VGS=6.0V
8
9
10
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
gfs [S]
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
0.14
0.13
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6V
6.5V
7V
0.200
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=28A,VGS=10V
0.12
0.11
0.175
0.150
0.10
RDS(on) [
Ω
]
RDS(on) [
Ω
]
0.09
0.08
0.07
0.06
0.05
0.04
8V
10V
20V
0.125
0.100
max.
0.075
typ.
0.050
0.03
0.02
0.01
0.00
0
10
20
30
40
50
60
70
80
90
100
0.000
-50
-25
0
25
50
75
100
125
150
0.025
ID [A]
Tch [
°
C]
2
2SK3874-01R
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=56A,Tch=25
°
C
12
Vcc= 56V
max.
10
140V
224V
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
Tch [
°
C]
Qg [nC]
10
4
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
3
Coss
10
C [pF]
10
2
Crss
1
10
1
10
0
IF [A]
-1
0
1
2
3
10
10
10
10
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
Ω
1200
1100
1000
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=56A
I
AS
=23A
10
3
900
800
tr
I
AS
=34A
700
t [ns]
10
2
td(off)
td(on)
EAV [mJ]
600
500
400
I
AS
=56A
tf
10
1
300
200
100
10
0
0
-1
10
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3874-01R
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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