Ordering number:ENN2041B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1144/2SD1684
100V/1.5A Switching Applications
Features
· Adoption of FBET and MBIT processes.
· High breakdown voltage.
· Large current capacity.
· Low saturation voltage.
· Plastic-covered heat sink facilitating high-density
mounting.
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
8.0
1.0
1.4
4.0
1.0
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
4.8
Conditions
1.7
( ) : 2SB1144
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)120
(–)100
(–)6
(–)1.5
(–)2.0
1.5
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
100*
30
(100)
120
MHz
MHz
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
Unit
nA
nA
* : The 2SB1144/2SD1684 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/5
2SB1144/2SD1684
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
(–)120
(–)100
(–)6
(80)80
1000
(750)
(40)50
Ratings
min
typ
(18)11
(–180)
100
(–)0.85
(–500)
300
(–)1.2
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=50V
RB
RL
100Ω
IC=10IB1= --10IB2=500mA
--1.6
IC -- VCE
2SB1144
1.6
IC -- VCE
2SD1684
--4
Collector Current, IC – A
--1.2
0mA
Collector Current, IC – A
1.2
mA
--50
mA
--30
A
--20m
A
--10m
50mA
40mA
30mA
20mA
10mA
0.8
--0.8
--5mA
5mA
3mA
0.4
--0.4
--3mA
--2mA
--1mA
2mA
1mA
0
0
--1
--2
--3
IB=0
--4
--5
ITR09063
0
0
1
2
3
IB=0
4
5
ITR09064
Collector-to-Emitter Voltage, VCE – V
--1.0
Collector-to-Emitter Voltage, VCE – V
1.0
IC -- VCE
--7m
A
IC -- VCE
6m
A
5mA
2SB1144
A
--6m
2SD1684
Collector Current, IC – A
Collector Current, IC – A
--0.8
--5mA
--4mA
0.8
4mA
0.6
--0.6
--3mA
--2mA
3mA
2mA
--0.4
0.4
--1mA
--0.2
0.2
1mA
0
0
--10
--20
IB=0
--30
--40
--50
ITR09065
0
0
10
20
30
IB=0
40
50
ITR09066
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2041–2/5
2SB1144/2SD1684
--1.6
IC -- VBE
2SB1144
VCE= --5V
1.6
IC -- VBE
2SD1684
VCE=5V
Collector Current, IC – A
--1.2
Collector Current, IC – A
1.2
--0.8
0.8
Ta=7
5
°
C
25
°
C
--25
°
C
--0.4
0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09068
Base-to-Emitter Voltage, VBE – V
1000
7
5
3
ITR09067
1000
7
5
3
Base-to-Emitter Voltage, VBE – V
hFE -- IC
2SB1144
VCE= --5V
Ta=75°C
hFE -- IC
2SD1684
VCE=5V
Ta=75°C
25
°
C
DC Current Gain, hFE
2
DC Current Gain, hFE
2
100
7
5
3
2
10
7
5
--25°C
7
5
3
2
10
7
5
5 7 --0.01
2
3
5
100
25°C
--25°C
Collector Current, IC – A
7 --0.1
2
3
5
7 --1.0
2
3
5 7 0.01
2
3
5
ITR09069
100
7
Collector Current, IC – A
7 0.1
Ta=
75
°
C
25
°
C
--25
°
C
2
3
5
7 1.0
2
3
ITR09070
1000
7
f T -- IC
2SB1144 /
2SD1684
VCE=10V
Cob -- VCB
2SB1144 /
2SD1684
f=1MHz
Gain-Bandwidth Product, fT – MHz
Output Capacitance, Cob -- pF
5
3
2
100
7
5
3
2
10
7
5
5 7 0.01
2
3
5
5
3
2
2SD1684
2SB1144
2SB
2SD
114
4
4
168
10
7
5
3
For PNP, minus sign is omitted.
7 0.1
2
3
5
7 1.0
2
3
2
5
7 1.0
2
3
5
For PNP, minus sign is omitted.
7
10
2
3
5
Collector Current, IC – A
5
3
ITR09071
5
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR09072
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
VCE(sat) -- IC
2SD1684
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SB1144
IC / IB=10
3
2
1000
7
5
3
2
100
7
5
3
2
2
--1000
7
5
3
2
--100
7
5
3
2
7 --0.01
2
3
5
7 --0.1
2
3
5
25
°
C
°
C
Ta=75
C
--25
°
Collector Current, IC – A
7 --1.0
2
ITR09073
Ta=75
°C
7 0.01
2
3
5
25
°
C
°
C
--25
7
0.1
2
3
5
7
2
1.0
ITR09074
Collector Current, IC – A
No.2041–3/5
2SB1144/2SD1684
--10
7
VBE(sat) -- IC
2SB1144
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
3
2
VBE(sat) -- IC
2SD1684
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
5 7 --0.01
25
°C
Ta=
--25°C
75
°C
1.0
7
5
3
2
5 7 0.01
Ta=
--25°C
75
°C
25
°
C
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
ITR09075
2.0
Collector Current, IC – A
ITR09076
ASO
ICP=2A
IC=1.5A
DC
DC
PC -- Ta
2SB1144 /
2SD1684
2SB1144 /
2SD1684
Collector Dissipation, P
C
– W
Collector Current, IC – A
op
Tc erat
op
=2 ion
era
5
°
C
tio
nT
a=
25
°
C
Ta=25°C, Single pulse
For PNP, minus sign is omitted.
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE –
11
10
PC -- Tc
2SB1144 /
2SD1684
s
1m
s
10m
s
0m
10
7 100
2
V
ITR09077
1.5
1.0
No
he
at
sin
k
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09078
Collector Dissipation, P
C
– W
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
ITR11794
No.2041–4/5
2SB1144/2SD1684
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.2041–5/5
京公网安备 11010802033920号
EEWORLD
