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2SC3647-T

Description
2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3647-T Overview

2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN

2SC3647-T Parametric

Parameter NameAttribute value
Objectid1428957716
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.4 V
Ordering number:ENN2006A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1417/2SC3647
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SA1417/2SC3647]
4.5
1.6
1.5
0.5
3
1.5
2
3.0
0.75
1
1.0
0.4
2.5
4.25max
0.4
( ) : 2SA1417
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Moutned on ceramic board (250
×0.8mm)
2
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Conditions
Ratings
(–)120
(–)100
(–)6
(–)2
(–)3
500
1.5
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
R
100 to 200
S
140 S 280
T
200 to 400
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
100*
120
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
MHz
Unit
nA
nA
* : The 2SA1417/2SC3647 are classified by 100mA h
FE
as follows :
Rank
hFE
Continued on next page.
Marking 2SA1417 : AC
2SC3647 : CC
h
FE
rank : R, S, T
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/4

2SC3647-T Related Products

2SC3647-T 2SA1417-R 2SA1417-S 2SA1417-T 2SC3647-R 2SC3647-S
Description 2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN 2000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN
Objectid 1428957716 1483105594 1428957725 1483105606 1483105686 1483105693
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 100 140 200 100 140
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN PNP PNP PNP NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Parts packaging code - SOT-89 - SOT-89 SOT-89 SOT-89
ECCN code - EAR99 - EAR99 EAR99 EAR99
Other features - HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
JEDEC-95 code - TO-243 - TO-243 TO-243 TO-243
Maximum power dissipation(Abs) - 0.5 W - 0.5 W 0.5 W 0.5 W

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