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2SD1684T

Description
1.5A, 100V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SD1684T Overview

1.5A, 100V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN

2SD1684T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Ordering number:2041A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1144/2SD1684
100V/1.5A Switching Applications
Features
· Adoption of FBET and MBIT processes.
· High breakdown voltage.
· Low saturation voltage.
· Plastic-covered heat sink facilitating high-density
mounting.
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
( ) : 2SB1144
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
Ratings
(–)120
(–)100
(–)6
(–)1.5
(–)2.0
1.5
Unit
V
V
V
A
A
W
W
Tc=25˚C
Tj
Tstg
10
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
100
Q
200
140
S
280
200
T
400
Conditions
Ratings
min
typ
max
(–)100
(–)100
100*
30
(100)
120
11(18)
400*
Unit
nA
nA
MHz
MHz
pF
* : The 2SB1144/2SD1684 are classified by 100mA h
FE
as follows :
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/4

2SD1684T Related Products

2SD1684T 2SD1684S 2SB1144S
Description 1.5A, 100V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 1.5A, 100V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 1.5A, 100V, PNP, Si, POWER TRANSISTOR, TO-126ML, 3 PIN
Is it Rohs certified? conform to conform to conform to
Parts packaging code SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 140 140
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 100 MHz
Base Number Matches 1 1 1
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