Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
| Parameter Name | Attribute value |
| Parts packaging code | TO-252 |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (Abs) (ID) | 7 A |
| Maximum drain current (ID) | 7 A |
| Maximum drain-source on-resistance | 0.9 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 60 W |
| Maximum pulsed drain current (IDM) | 28 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SK1541(L) | 2SK1540(L) | 2SK1540(S) | 2SK1541(S) | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3/2 | Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3/2 |
| Parts packaging code | TO-252 | TO-252 | TO-252 | TO-252 |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V | 450 V | 450 V | 500 V |
| Maximum drain current (Abs) (ID) | 7 A | 7 A | 7 A | 7 A |
| Maximum drain current (ID) | 7 A | 7 A | 7 A | 7 A |
| Maximum drain-source on-resistance | 0.9 Ω | 0.8 Ω | 0.8 Ω | 0.9 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 60 W | 60 W | 60 W | 60 W |
| Maximum pulsed drain current (IDM) | 28 A | 28 A | 28 A | 28 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES | YES |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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